IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 200 DS Repetitive avalanche rated R ( )V = 10 V 0.80 DS(on) GS Surface mount (IRFR220, SiHFR220) Q (Max.) (nC) 14 g Straight lead (IRFU220, SiHFU220) Q (nC) 3.0 gs Available Available in tape and reel Q (nC) 7.9 gd Fast switching Configuration Single Ease of paralleling D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION D D Third generation power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S G S D The DPAK is designed for surface mounting using vapor S G phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR220-GE3 SiHFR220TRL-GE3 - - SiHFU220-GE3 a a a Lead (Pb)-free IRFR220PbF IRFR220TRLPbF IRFR220TRPbF IRFR220TRRPbF IRFU220PbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 4.8 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.0 A C a Pulsed Drain Current I 19 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 161 mJ AS a Repetitive Avalanche Current I 4.8 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 14 mH, R = 25 , I = 4.8 A (see fig. 12). DD J g AS c. I 5.2 A, dI/dt 95 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S15-2678-Rev. F, 16-Nov-15 Document Number: 91270 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.29 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.9 A - - 0.80 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.9 A 1.7 - - S fs DS D Dynamic Input Capacitance C - 260 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 100- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -- 14 g I = 4.8 A, V = 160 V, D DS Gate-Source Charge Q --V = 10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.9 gd Turn-On Delay Time t -7.2 - d(on) Rise Time t -22 - r V = 100 V, I = 4.8 A, DD D ns b R = 18 , R = 20 , see fig. 10 Turn-Off Delay Time t -1G D 9- d(off) Fall Time t -13- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.8 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 19 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 4.8 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 150 300 ns rr b T = 25 C, I = 4.8 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.91 1.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-2678-Rev. F, 16-Nov-15 Document Number: 91270 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000