IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g DPAK IPAK requirement (TO-252) (TO-251) Improved gate, avalanche and dynamic dV/d t D D ruggedness G Fully characterized capacitance an d Available S avalanche voltage and current G S D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS PRODUCT SUMMARY Switch mode power supply (SMPS) Uninterruptible power supply V (V) 600 DS R max. ()V = 10 V 7.0 Power factor correction DS(on) GS Q max. (nC) 14 g TYPICAL SMPS TOPOLOGIES Q (nC) 2.7 gs Low power single transistor flyback Q (nC) 8.1 gd Configuration Single ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a SiHFR1N60A-GE3 SiHFR1N60ATRL-GE3 SiHFR1N60ATR-GE3 SiHFU1N60A-GE3 Lead (Pb)-free and halogen-free ab ab a IRFR1N60APbF-BE3 IRFR1N60ATRPbF-BE3 SiHFR1N60ATRR-GE3 - a a Lead (Pb)-free IRFR1N60APbF IRFR1N60ATRLPbF IRFR1N60ATRPbF IRFU1N60APbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 1.4 C Continuous drain current V at 10 V I GS D T = 100 C 0.89 A C a Pulsed drain current I 5.6 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 93 mJ AS a Repetitive avalanche current I 1.4 A AR a Repetitive avalanche energy E 3.6 mJ AR Maximum power dissipation T = 25 C P 36 W A D c Peak diode recovery dV/dt dV/dt 3.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 95 mH, R = 25 , I = 1.4 A (see fig. 12) J g AS c. I 1.4 A, dI/dt 180 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0466-Rev. E, 17-May-2021 Document Number: 91267 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R - 110 thJA a Maximum junction-to-ambient (PCB mount) R -50 C/W thJA Maximum junction-to-case (drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - DS GS D V V temperature coefficient V V = V , I = 250 A 2.0 - 4.0 DS GS(th) DS GS D Gate-source threshold voltage I V = 30 V - - 100 nA GSS GS Gate-source leakage V = 600 V, V = 0 V - - 25 DS GS I A DSS V = 480 V, V = 0 V, T = 150 C - - 250 DS GS J Zero gate voltage drain current b R V = 10 V I = 0.84 A -- 7.0 DS(on) GS D Drain-source on-state resistance g V = 50 V, I = 0.84 A 0.88 - - S fs DS D Dynamic Input capacitance C - 229 - iss V = 0 V, GS Output capacitance C -3V = 25 V, 2.6- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -2.4- rss pF V = 1.0 V, f = 1.0 MHz - 320 - DS Output capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 11.5 - GS DS c Effective output capacitance C eff. V = 0 V to 480 V - 130 - oss DS Total gate charge Q -- 14 g I = 1.4 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 2.7 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --8.1 gd Turn-on delay time t -9.8 - d(on) Rise time t -14 - r V = 250 V, I = 1.4 A, DD D ns b R = 2.15 , R = 178 , see fig. 10 g D Turn-off delay time t -18- d(off) Fall time t -20- f Drain-source body diode characteristics D MOSFET symbol Continuous source-drain diode current I -- 1.4 S showing the A G integral reverse a Pulsed diode forward current I -- 5.6 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 1.4 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 290 440 ns rr b T = 25 C, I = 1.4 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 510 760 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V oss oss DS DS S21-0466-Rev. E, 17-May-2021 Document Number: 91267 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000