X-On Electronics has gained recognition as a prominent supplier of IRFR1N60ATRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR1N60ATRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR1N60ATRPBF Vishay

IRFR1N60ATRPBF electronic component of Vishay
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Part No.IRFR1N60ATRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak
Datasheet: IRFR1N60ATRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.633 ea
Line Total: USD 1.63 
Availability - 2711
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.741
4000 : USD 0.741
6000 : USD 0.741
8000 : USD 0.741

2711
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.633
10 : USD 1.2305
100 : USD 0.9062
500 : USD 0.7613
1000 : USD 0.7164
2000 : USD 0.6946
10000 : USD 0.6946
24000 : USD 0.69

1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.9008

   
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We are delighted to provide the IRFR1N60ATRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR1N60ATRPBF and other electronic components in the MOSFETs category and beyond.

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g DPAK IPAK requirement (TO-252) (TO-251) Improved gate, avalanche and dynamic dV/d t D D ruggedness G Fully characterized capacitance an d Available S avalanche voltage and current G S D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS PRODUCT SUMMARY Switch mode power supply (SMPS) Uninterruptible power supply V (V) 600 DS R max. ()V = 10 V 7.0 Power factor correction DS(on) GS Q max. (nC) 14 g TYPICAL SMPS TOPOLOGIES Q (nC) 2.7 gs Low power single transistor flyback Q (nC) 8.1 gd Configuration Single ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a SiHFR1N60A-GE3 SiHFR1N60ATRL-GE3 SiHFR1N60ATR-GE3 SiHFU1N60A-GE3 Lead (Pb)-free and halogen-free ab ab a IRFR1N60APbF-BE3 IRFR1N60ATRPbF-BE3 SiHFR1N60ATRR-GE3 - a a Lead (Pb)-free IRFR1N60APbF IRFR1N60ATRLPbF IRFR1N60ATRPbF IRFU1N60APbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 1.4 C Continuous drain current V at 10 V I GS D T = 100 C 0.89 A C a Pulsed drain current I 5.6 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 93 mJ AS a Repetitive avalanche current I 1.4 A AR a Repetitive avalanche energy E 3.6 mJ AR Maximum power dissipation T = 25 C P 36 W A D c Peak diode recovery dV/dt dV/dt 3.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 95 mH, R = 25 , I = 1.4 A (see fig. 12) J g AS c. I 1.4 A, dI/dt 180 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0466-Rev. E, 17-May-2021 Document Number: 91267 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R - 110 thJA a Maximum junction-to-ambient (PCB mount) R -50 C/W thJA Maximum junction-to-case (drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - DS GS D V V temperature coefficient V V = V , I = 250 A 2.0 - 4.0 DS GS(th) DS GS D Gate-source threshold voltage I V = 30 V - - 100 nA GSS GS Gate-source leakage V = 600 V, V = 0 V - - 25 DS GS I A DSS V = 480 V, V = 0 V, T = 150 C - - 250 DS GS J Zero gate voltage drain current b R V = 10 V I = 0.84 A -- 7.0 DS(on) GS D Drain-source on-state resistance g V = 50 V, I = 0.84 A 0.88 - - S fs DS D Dynamic Input capacitance C - 229 - iss V = 0 V, GS Output capacitance C -3V = 25 V, 2.6- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -2.4- rss pF V = 1.0 V, f = 1.0 MHz - 320 - DS Output capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 11.5 - GS DS c Effective output capacitance C eff. V = 0 V to 480 V - 130 - oss DS Total gate charge Q -- 14 g I = 1.4 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 2.7 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --8.1 gd Turn-on delay time t -9.8 - d(on) Rise time t -14 - r V = 250 V, I = 1.4 A, DD D ns b R = 2.15 , R = 178 , see fig. 10 g D Turn-off delay time t -18- d(off) Fall time t -20- f Drain-source body diode characteristics D MOSFET symbol Continuous source-drain diode current I -- 1.4 S showing the A G integral reverse a Pulsed diode forward current I -- 5.6 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 1.4 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 290 440 ns rr b T = 25 C, I = 1.4 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 510 760 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V oss oss DS DS S21-0466-Rev. E, 17-May-2021 Document Number: 91267 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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