X-On Electronics has gained recognition as a prominent supplier of PMGD290UCEAX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMGD290UCEAX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMGD290UCEAX Nexperia

PMGD290UCEAX electronic component of Nexperia
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See Product Specifications
Part No.PMGD290UCEAX
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array N and P-Channel 20V 725mA, 500mA 280mW Surface Mount 6-TSSOP
Datasheet: PMGD290UCEAX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0382 ea
Line Total: USD 114.6 
Availability - 192060
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0842
9000 : USD 0.0842
15000 : USD 0.0842
30000 : USD 0.0842
60000 : USD 0.0842

42819
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3691
10 : USD 0.2484
100 : USD 0.1345
1000 : USD 0.1208
3000 : USD 0.0943
9000 : USD 0.0931
24000 : USD 0.0897
45000 : USD 0.0816
99000 : USD 0.0816

1149
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.3598
100 : USD 0.21
118 : USD 0.1484
323 : USD 0.1414

192060
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0382

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
Brand Category
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We are delighted to provide the PMGD290UCEAX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMGD290UCEAX and other electronic components in the MOSFETs category and beyond.

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PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V I = -400 mA T = 25 C - 670 850 m DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 725 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -20 V DS jNexperia PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 G1 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD290UCEA TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 PMGD290UCEA YD% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T = 25 C - 20 V DS j V gate-source voltage -8 8 V GS PMGD290UCEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2014 2 / 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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