PMGD400UN,115 NXP

PMGD400UN Dual N-channel TrenchMOS ultra low level FET Rev. 01 3 March 2004 Product data MBD128 1. Product prole 1.1 Description Dual N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold voltage. 1.3 Applications Driver circuits Switching in portable appliances. 1.4 Quick reference data V 30 V I 0.71 A DS D P 0.41 W R 480 m. tot DSon 2. Pinning information Table 1: Pinning - SOT363 (SC-88), simplied outline and symbol Pin Description Simplied outline Symbol 1 source (s1) 65 4 d d 1 2 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) s g s g 1 1 2 2 6 drain (d1) MSD901 12 3 Top view MSA370 SOT363 (SC-88)PMGD400UN Philips Semiconductors Dual N-channel TrenchMOS ultra low level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMGD400UN SC-88 Plastic surface mounted package 6 leads SOT363 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 30 V DS j V drain-gate voltage (DC) 25 C T 150 C R =20k -30 V DGR j GS V gate-source voltage (DC) - 8V GS 1 I drain current (DC) T =25 C V = 4.5 V Figure 2 and 3 - 0.71 A D sp GS 1 T = 100 C V = 4.5 V Figure 2 - 0.45 A sp GS 1 I peak drain current T =25 C pulsed t 10 s Figure 3 - 1.42 A DM sp p P total power dissipation T =25 C Figure 1 - 0.41 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode 1 I source (diode forward) current (DC) T =25 C - 0.34 A S sp 1 I peak source (diode forward) current T =25 C pulsed t 10 s - 0.69 A SM sp p 1 Single device conducting. 9397 750 12759 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 3 March 2004 2 of 12