X-On Electronics has gained recognition as a prominent supplier of PMGD280UN,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMGD280UN,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMGD280UN,115 Nexperia

PMGD280UN,115 electronic component of Nexperia
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See Product Specifications
Part No.PMGD280UN,115
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 20V 870mA 400mW Surface Mount 6-TSSOP
Datasheet: PMGD280UN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1302 ea
Line Total: USD 0.65 
Availability - 37830
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
37830
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1302
50 : USD 0.1041
150 : USD 0.091
500 : USD 0.0811
3000 : USD 0.0733
6000 : USD 0.0694

210056
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2882
10 : USD 0.1848
100 : USD 0.1089
1000 : USD 0.0968
3000 : USD 0.0781
9000 : USD 0.0737
24000 : USD 0.0726
45000 : USD 0.0704

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0988
6000 : USD 0.0978
9000 : USD 0.0897
15000 : USD 0.0888
21000 : USD 0.0858
30000 : USD 0.081

4617
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1330
Multiples : 1
1330 : USD 0.0978

346290
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5485
Multiples : 1
5485 : USD 0.0889

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0781

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMGD280UN,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMGD280UN,115 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMGD280UN Dual N-channel TrenchMOS ultra low level FET Rev. 01 10 February 2004 Product data MBD128 1. Product prole 1.1 Description Dual N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold voltage. 1.3 Applications Driver circuits Switching in portable appliances. 1.4 Quick reference data V 20 V I 0.87 A DS D P 0.41 W R 340 m. tot DSon 2. Pinning information Table 1: Pinning - SOT363 (SC-88), simplied outline and symbol Pin Description Simplied outline Symbol 1 source (s1) 65 4 d d 1 2 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) s g s g 1 1 2 2 6 drain (d1) MSD901 12 3 Top view MSA370 SOT363 (SC-88)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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