PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features D Advanced Process Technology V = 55V DSS Ultra Low On-Resistance 150C Operating Temperature R = 57.5m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 5.1A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. SOT-223 Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) 5.1 I T = 25C D A GS I T = 70C Continuous Drain Current, V 10V 4.1 A GS D A 41 I Pulsed Drain Current DM Power Dissipation 2.8 P T = 25C A D P T = 25C Power Dissipation 1.0 W D A Linear Derating Factor 0.02 W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy 13 mJ AS (Thermally limited) E (Tested ) Single Pulse Avalanche Energy Tested Value 32 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR Operating Junction and -55 to + 150 T J T Storage Temperature Range C STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient (PCB mount, steady state) 45 JA C/W R Junction-to-Ambient (PCB mount, steady state) 120 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 46.2 57.5 V = 10V, I = 3.1A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 6.2 S V = 25V, I = 3.1A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 9.1 14 I = 3.1A D Q Gate-to-Source Charge 1.9 nC = 44V gs V DS Q Gate-to-Drain Mille) Charge 3.9 V = 10V gd GS t Turn-On Delay Time 7.8 V = 28V d(on) DD t Rise Time 21 ns I = 3.1A r D t Turn-Off Delay Time 30 R = 53 d(off) G t Fall Time 23 V = 10V f GS C Input Capacitance 340 V = 0V iss GS C Output Capacitance 68 V = 25V oss DS C Reverse Transfer Capacitance 39 pF = 1.0MHz rss C Output Capacitance 210 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 55 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 93 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 5.1 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 41 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 3.1A, V = 0V SD J S GS t Reverse Recovery Time 15 23 ns T = 25C, I = 3.1A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 9.8 15 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax max. junction temperature. (See fig. 11). repetitive avalanche performance. Limited by T , starting T = 25C, L = 2.8mH This value determined from sample failure population. Jmax J R = 25 , I = 3.1A, V =10V. GS 100% tested to this value in production. G AS Part not recommended for use above this value. When mounted on 1 inch square copper board. Pulse width 1.0ms duty cycle 2%. When mounted on FR-4 board using minimum C eff. is a fixed capacitance that gives the same oss recommended footprint. charging time as C while V is rising from 0 to 80% oss DS V . DSS 2 www.irf.com