X-On Electronics has gained recognition as a prominent supplier of IRFL110PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFL110PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFL110PBF Vishay

IRFL110PBF electronic component of Vishay
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See Product Specifications
Part No.IRFL110PBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 100V 1.5 Amp
Datasheet: IRFL110PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
80: USD 0.3861 ea
Line Total: USD 30.89 
Availability - 0
MOQ: 80  Multiples: 80
Pack Size: 80
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1397
10 : USD 0.8681
100 : USD 0.7101
500 : USD 0.6118
1000 : USD 0.5331
5000 : USD 0.5134

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 80
Multiples : 80
80 : USD 0.3861
1440 : USD 0.3539

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 11
Multiples : 1
11 : USD 2.9782

   
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Transistor Polarity
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Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Current Id Max
Current Temperature
Full Power Rating Temperature
Junction To Case Thermal Resistance A
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Smd Marking
Termination Type
Voltage Vds
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
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We are delighted to provide the IRFL110PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFL110PBF and other electronic components in the MOSFETs category and beyond.

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IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 100 Available in tape and reel DS Dynamic dV/dt rating R ( )V = 10 V 0.54 DS(on) GS Repetitive avalanche rated Q (Max.) (nC) 8.3 g Fast switching Q (nC) 2.3 gs Ease of paralleling Available Q (nC) 3.8 Simple drive requirements gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 D DESCRIPTION Third generation power MOSFETs from Vishay provide the SOT-223 designer with the best combination of fast switching, D ruggedized device design, low on-resistance and cost-effectiveness. G S The SOT-223 package is designed for surface-mounting D G using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic Marking code: FB pick-and-place as with other SOT or SOIC packages but S has the added advantage of improved thermal performance N-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package SOT-223 SOT-223 a Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a IRFL110PbF IRFL110TRPbF Lead (Pb)-free a SiHFL110-E3 SiHFL110T-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 1.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 0.96 A C a Pulsed Drain Current I 12 DM Linear Derating Factor 0.025 W/C e Linear Derating Factor (PCB Mount) 0.017 b Single Pulse Avalanche Energy E 150 mJ AS a Repetitive Avalanche Current I 1.5 A AR a Repetitive Avalanche Energy E 0.31 mJ AR Maximum Power Dissipation T = 25 C 3.1 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.0 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 25 mH, R = 25 , I = 3.0 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S14-1685-Rev. E, 18-Aug-14 Document Number: 91192 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL110, SiHFL110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 60 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.90 A - - 0.54 DS(on) GS D Forward Transconductance g V = 50 V, I = 0.90 A 1.1 - - S fs DS D Dynamic Input Capacitance C - 180 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.8 gd Turn-On Delay Time t -6.9 - d(on) Rise Time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 Turn-Off Delay Time t -1g D 5- d(off) Fall Time t -9.4- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -6.0 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.5 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 12 SM S b Body Diode Voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.44 0.88 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-1685-Rev. E, 18-Aug-14 Document Number: 91192 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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