IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 250 DS Available in tape and reel R ( )V = 10 V 2.0 Dynamic dV/dt rating DS(on) GS Repetitive avalanche rated Q (Max.) (nC) 8.2 g Fast switching Q (nC) 1.8 gs Available Ease of paralleling Q (nC) 4.5 gd Simple drive requirements Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D DESCRIPTION Third generation power MOSFETs from Vishay provide the SOT-223 designer with the best combination of fast switching, ruggedized device design, low on-resistance and D cost-effectiveness. G The SOT-223 package is designed for surface-mounting S D using vapor phase, infrared, or wave soldering techniques. G Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but Marking code: FD S has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of N-Channel MOSFET greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package SOT-223 SOT-223 a Lead (Pb)-free and Halogen-free SiHFL214-GE3 SiHFL214TR-GE3 a IRFL214PbF IRFL214TRPbF Lead (Pb)-free a SiHFL214-E3 SiHFL214T-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 0.79 C Continuous Drain Current V at 10 V I GS D T = 100 C 0.50 A C a Pulsed Drain Current I 6.3 DM Linear Derating Factor 0.025 W/C e Linear Derating Factor (PCB Mount) 0.017 b Single Pulse Avalanche Energy E 50 mJ AS a Repetitive Avalanche Current I 0.79 A AR a Repetitive Avalanche Energy E 0.31 mJ AR Maximum Power Dissipation T = 25 C 3.1 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.0 A c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 128 mH, R = 25 , I = 0.79 A (see fig. 12). DD J g AS c. I 2.7 A, dI/dt 65 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S14-1685-Rev. E, 18-Aug-14 Document Number: 91194 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL214, SiHFL214 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 60 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.39 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.47 A -- 2.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 0.47 A 0.50 - - S fs DS D Dynamic Input Capacitance C - 140 - iss V = 0 V, GS Output Capacitance C -4V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -9.6- rss Total Gate Charge Q -- 8.2 g I = 2.7 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.5 gd Turn-On Delay Time t -7.0 - d(on) Rise Time t -7.6 - r V = 125 V, I = 2.7 A, DD D ns b R = 24 , R = 45 , see fig. 10 Turn-Off Delay Time t -1g D 6- d(off) Fall Time t -7.0- f D Internal Drain Inductance L Between lead, -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 0.79 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 6.3 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 0.79 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 190 390 ns rr b T = 25 C, I = 2.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.64 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-1685-Rev. E, 18-Aug-14 Document Number: 91194 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000