IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 Repetitive avalanche rated G D Fast switching Available Ease of paralleling S Simple drive requirements D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: FD designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. V (V) 250 The SOT-223 package is designed for surface-mounting DS using vapor phase, infrared, or wave soldering techniques. R ( )V = 10 V 2.0 DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 8.2 g pick-and-place as with other SOT or SOIC packages bu t has the added advantage of improved thermal performance Q (nC) 1.8 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 4.5 gd greater than 1.25 W is possible in a typical surface moun t Configuration Single application. ORDERING INFORMATION Package SOT-223 a SiHFL214TR-GE3 Lead (Pb)-free and halogen-free a, b IRFL214TRPbF-BE3 a Lead (Pb)-free IRFL214TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 0.79 C Continuous drain current V at 10 V I GS D T = 100 C 0.50 A C a Pulsed drain current I 6.3 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 50 mJ AS a Avalanche current I 0.79 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt 4.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 128 mH, R = 25 , I = 0.79 A (see fig. 12) DD J g AS c. I 2.7 A, dI/dt 65 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. F, 05-Apr-2021 Document Number: 91194 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL214, SiHFL214 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.39 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 0.47 A -- 2.0 DS(on) GS D Forward transconductance g V = 50 V, I = 0.47 A 0.50 - - S fs DS D Dynamic Input capacitance C - 140 - iss V = 0 V, GS Output capacitance C -4V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -9.6- rss Total gate charge Q -- 8.2 g I = 2.7 A, V = 200 V, D DS Gate-source charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --4.5 gd Turn-on delay time t -7.0 - d(on) Rise time t -7.6 - r V = 125 V, I = 2.7 A, DD D ns b R = 24 , R = 45 , see fig. 10 Turn-off delay time t -1g D 6- d(off) Fall time t -7.0- f D Internal drain inductance L Between lead, -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I - - 0.79 S showing the A integral reverse G a Pulsed diode forward current I -- 6.3 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 0.79 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 190 390 ns rr b T = 25 C, I = 2.7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.64 1.3 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. F, 05-Apr-2021 Document Number: 91194 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000