IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 Repetitive avalanche rated G D Fast switching Available Ease of paralleling S D Simple drive requirements G S Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Marking code: FC Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. V (V) 200 DS The SOT-223 package is designed for surface-mounting R ( )V = 10 V 1.5 using vapor phase, infrared, or wave soldering techniques. DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 8.2 g pick-and-place as with other SOT or SOIC packages bu t Q (nC) 1.8 gs has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 4.5 gd greater than 1.25 W is possible in a typical surface moun t Configuration Single application. ORDERING INFORMATION Package SOT-223 a SiHFL210TR-GE3 Lead (Pb)-free and halogen-free a, b IRFL210TRPbF-BE3 a Lead (Pb)-free IRFL210TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 0.96 C Continuous drain current V at 10 V I GS D T = 100 C 0.6 A C a Pulsed drain current I 7.7 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 50 mJ AS a Avalanche current I 0.96 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 81 mH, R = 25 , I = 0.96 A (see fig. 12) DD J G AS c. I 3.3 A, dI/dt 70 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. F, 05-Apr-2021 Document Number: 91193 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL210, SiHFL210 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 40 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 60 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.30 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 0.58 A -- 1.5 DS(on) GS D Forward transconductance g V = 50 V, I = 0.58 A 0.51 - - S fs DS D Dynamic Input capacitance C - 140 - iss V = 0 V, GS Output capacitance C -5V = 25 V, 3- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 8.2 g I = 3.3 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --4.5 gd Turn-on delay time t -8.2 - d(on) Rise time t -17 - r V = 100 V, I = 3.3 A, DD D ns b R = 24 , R = 30 , see fig. 10 Turn-off delay time t -1g D 4- d(off) Fall time t -8.9- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I - - 0.96 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 7.7 SM S b Body diode voltage V T = 25 C, I = 0.96 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 150 310 ns rr b T = 25 C, I = 3.3 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.60 1.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. F, 05-Apr-2021 Document Number: 91193 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000