IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -100 Available in tape and reel DS Dynamic dV/dt rating R ( )V = -10 V 1.2 DS(on) GS Repetitive avalanche rated Q (Max.) (nC) 8.7 g P-channel Q (nC) 2.2 gs Fast switching Available Q (nC) 4.1 gd Ease of paralleling Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 S DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, SOT-223 ruggedized device design, low on-resistance and G D cost-effectiveness. The SOT-223 package is designed for surface-mount using S vapor phase, infrared, or wave soldering techniques. Its D G unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but D Marking code: FF has the added advantage of improved thermal performance P-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package SOT-223 SOT-223 a Lead (Pb)-free and Halogen-free SiHFL9110-GE3 SiHFL9110TR-GE3 a IRFL9110PbF IRFL9110TRPbF Lead (Pb)-free a SiHFL9110-E3 SiHFL9110T-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -100 DS V Gate-Source Voltage V 20 GS T = 25 C -1.1 C Continuous Drain Current V at - 10 V I GS D T = 100 C -0.69 A C a Pulsed Drain Current I -8.8 DM Linear Derating Factor 0.025 W/C e Linear Derating Factor (PCB Mount) 0.017 b Single Pulse Avalanche Energy E 100 mJ AS a Avalanche Current I -1.1 A AR a Repetitive Avalanche Energy E 0.31 mJ AR Maximum Power Dissipation T = 25 C 3.1 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.0 A c Peak Diode Recovery dV/dt dV/dt -5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -25 V, starting T = 25 C, L = 7.7 mH, R = 25 , I = -4.4 A (see fig. 12). DD J g AS c. I -4.4 A, dI/dt -75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S14-1686-Rev. F, 18-Aug-14 Document Number: 91196 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 60 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.091 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -80 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -0.66 A -- 1.2 DS(on) GS D Forward Transconductance g V = -50 V, I = -0.66 A 0.82 - - S fs DS D Dynamic Input Capacitance C - 200 - iss V = 0 V, GS Output Capacitance C -9V = - 25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 8.7 g I = -4.0 A, V = -80 V, D DS Gate-Source Charge Q --V = -10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.1 gd Turn-On Delay Time t -10 - d(on) Rise Time t -27 - r V = -50 V, I = -4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 Turn-Off Delay Time t -1G D 5- d(off) Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -6.0 - die contact S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- -1.1 S showing the A G integral reverse a Pulsed Diode Forward Current I S -- -8.8 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = -1.1 A, V = 0 V -- -5.5 V SD J S GS Body Diode Reverse Recovery Time t - 80 160 ns rr b T = 25 C, I = -4.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.15 0.30 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-1686-Rev. F, 18-Aug-14 Document Number: 91196 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000