IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need V (V) 500 DS Available For External Diodes in ZVS Applications R ()V = 10 V 0.28 DS(on) GS RoHS* Low Gate Charge Results in Simple Drive Q (Max.) (nC) 130 COMPLIANT g Requirement Q (nC) 33 gs Enhanced dV/dt Capabilities Offer Improved Q (nC) 59 gd Ruggedness Configuration Single Higher Gate Voltage Threshold Offers Improved Noise D Immunity Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS Zero Voltage Switching SMPS G Telecom and Server Power Supplies S Uninterruptible Power Supply D S G Motor Control applications N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP17N50LPbF Lead (Pb)-free SiHFP17N50L-E3 IRFP17N50L SnPb SiHFP17N50L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 16 C Continuous Drain Current V at 10 V I GS D T = 100 C 11 A C a Pulsed Drain Current I 64 DM Linear Derating Factor 1.8 W/C b Single Pulse Avalanche Energy E 390 mJ AS a Repetitive Avalanche Current I 16 A AR a Repetitive Avalanche Energy E 22 mJ AR Maximum Power Dissipation T = 25 C P 220 W C D c Peak Diode Recovery dV/dt dV/dt 13 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 3.0 mH, R = 25 , I = 16 A (see fig. 12). J g AS c. I 16 A, dI/dt 347 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91205 www.vishay.com S11-0446-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP17N50L, SiHFP17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -0.56 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 A DS GS Zero Gate Voltage Drain Current I DSS V = 400 V, V = 0 V, T = 125 C - - 2.0 mA DS GS J b Drain-Source On-State Resistance R V = 10 V I = 9.9 A - 0.28 0.32 DS(on) GS D b Forward Transconductance g V = 50 V, I = 9.9 A 11 - - S fs DS D Dynamic Input Capacitance C - 2760 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 325- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss V = 1.0 V , f = 1.0 MHz - 3690 - DS pF Output Capacitance C oss V = 400 V , f = 1.0 MHz - 84 - DS V = 0 V Effective Output Capacitance C eff. GS - 159 - oss V = 0 V to 400 V Effective Output Capacitance DS C eff. (ER) - 120 - oss (Energy Related) Internal Gate Resistance R f = 1 MHz, open drain - 1.4 - g Total Gate Charge Q - - 130 g I = 16 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 33 nC gs GS b see fig. 7 and 15 --59 Gate-Drain Charge Q gd Turn-On Delay Time t -21 - d(on) V = 250 V, I = 16 A DD D Rise Time t -51 - r R = 7.5 , V = 10 V ns G GS Turn-Off Delay Time t -50- d(off) b see fig. 14a and 14b Fall Time t -28- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 16 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 64 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 16 A, V = 0 V -- 1.5 V SD J S GS T = 25 C - 170 250 J Body Diode Reverse Recovery Time t ns rr T = 125 C - 220 330 J I = 16 A, F b dI/dt = 100 A/s T = 25 C - 470 710 J Body Diode Reverse Recovery Charge Q C rr T = 125 C - 810 1210 J Reverse Recovery Current I T = 25 C - 7.3 11 RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising fom 0 % to 80 % V . OSS OSS DS DS C eff. (ER) is a fixed capacitance that stores the same energy as C while V is rising fom 0 % to 80 % V . OSS OSS DS DS www.vishay.com Document Number: 91205 2 S11-0446-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000