IRFP150A Advanced Power MOSFET FEATURES BV = 100 V DSS Avalanche Rugged Technology R = 0.04 DS(on) Rugged Gate Oxide Technology Lower Input Capacitance I = 43 A D Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) V = 100V DS Lower R : 0.032 (Typ.) 1 DS(ON) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage 100 V DSS Continuous Drain Current (T =25 C) 43 C I A D Continuous Drain Current (T =100 ) C 30.4 C I Drain Current-Pulsed 1 170 A O DM V Gate-to-Source Voltage + V GS 20 E Single Pulsed Avalanche Energy 2 740 mJ AS O I Avalanche Current 1 43 A AR O E Repetitive Avalanche Energy 1 mJ 19.3 AR O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O Total Power Dissipation (T =25 ) W C 193 C P D Linear Derating Factor 1.28 W/ C Operating Junction and T , T - 55 to +175 J STG Storage Temperature Range C Maximum Lead Temp. for Soldering T 300 L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R Junction-to-Case -- 0.78 JC R Case-to-Sink 0.24 -- CS C/W R Junction-to-Ambient -- 40 JA Rev. B 1999 Fairchild Semiconductor CorporationN-CHANNEL IRFP150A POWER MOSFET Electrical Characteristics (T =25 C unless otherwise specified) C Symbol Characteristic Min. Typ. Max. Units Test Condition BV V =0V,I =250 A DSS Drain-Source Breakdown Voltage 100 -- -- V GS D BV/ T I =250 A See Fig 7 Breakdown Voltage Temp. Coeff. V/ C J -- 0.11 -- D V V =5V,I =250 A GS(th) Gate Threshold Voltage 2.0 -- 4.0 V DS D V =20V Gate-Source Leakage , Forward -- -- 100 GS I nA GSS V =-20V Gate-Source Leakage , Reverse -- -- -100 GS V =100V -- -- 10 DS I Drain-to-Source Leakage Current DSS A V =80V,T =150 C -- -- 100 DS C Static Drain-Source 4 R -- -- 0.04 V =10V,I =21.5A O DS(on) GS D On-State Resistance g -- 4 Forward Transconductance 28.34 -- V =40V,I =21.5A fs O DS D C Input Capacitance -- 1750 2270 iss V =0V,V =25V,f =1MHz GS DS C -- 485 Output Capacitance 420 oss pF See Fig 5 C Reverse Transfer Capacitance -- 215 rss 185 t -- 50 Turn-On Delay Time 17 d(on) V =50V,I =40A, DD D t Rise Time -- 50 r 20 ns R =6.2 G t -- Turn-Off Delay Time 80 160 d(off) 4 See Fig 13 5 O O t Fall Time -- 100 f 45 Q -- Total Gate Charge 75 97 V =80V,V =10V, g DS GS Q nC Gate-Source Charge -- 13.2 -- I =40A gs D 4 5 OO Q -- Gate-Drain(Miller) Charge 34.8 -- See Fig 6 & Fig 12 gd Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition I Continuous Source Current -- -- 43 Integral reverse pn-diode S A 1 I Pulsed-Source Current O -- -- 170 in the MOSFET SM 4 V Diode Forward Voltage -- -- 1.6 V T =25 C,I =43A,V =0V O SD J S GS t Reverse Recovery Time ns C -- 135 -- T =25 ,I =40A rr J F 4 Q Reverse Recovery Charge -- 0.65 -- C di /dt=100A/ s O rr F Notes 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=0.6mH, I =43A, V =25V, R =27 , Starting T =25 C O AS DD G J o 3 < I 40A, di/dt < 470A/ s, V < BV , Starting T =25 C O SD DD DSS J 4 Pulse Test : Pulse Width = 250 s, Duty Cycle 2% < O Essentially Independent of Operating Temperature 5 O