X-On Electronics has gained recognition as a prominent supplier of IRFP22N60KPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFP22N60KPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFP22N60KPBF Vishay

IRFP22N60KPBF electronic component of Vishay
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Part No.IRFP22N60KPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 600 V 22A (Tc) 370W (Tc) Through Hole TO-247AC
Datasheet: IRFP22N60KPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.9109 ea
Line Total: USD 4.91 
Availability - 140
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
140
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 4.9109
10 : USD 4.6698
25 : USD 4.5221
100 : USD 4.3995

192
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 6.523
10 : USD 5.115

   
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We are delighted to provide the IRFP22N60KPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFP22N60KPBF and other electronic components in the MOSFETs category and beyond.

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IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 600 DS Requirement Available R ( )V = 10 V 0.24 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 150 g COMPLIANT Ruggedness Q (nC) 45 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 76 gd and Current Configuration Single Enhanced Body Diode dV/dt Capability D Compliant to RoHS Directive 2002/95/EC TO-247AC BENEFITS Hard Switching Primary or PFS Switch G Switch Mode Power Supply (SMPS) Uninterruptible Power Supply S D High Speed Power Switching S G Motor Drive N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP22N60KPbF Lead (Pb)-free SiHFP22N60K-E3 IRFP22N60K SnPb SiHFP22N60K ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 22 C Continuous Drain Current V at 10 V I GS D T = 100 C 14 A C a Pulsed Drain Current I 88 DM Linear Derating Factor 2.9 W/C b Single Pulse Avalanche Energy E 380 mJ AS a Repetitive Avalanche Current I 22 A AR a Repetitive Avalanche Energy E 37 mJ AR Maximum Power Dissipation T = 25 C P 370 W C D c Peak Diode Recovery dV/dt dV/dt 15 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1.5 mH, R = 25 , I = 22 A (see fig. 12). J g AS c. I 22 A, dI/dt 360 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 www.vishay.com S11-0445-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP22N60K, SiHFP22N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) -0.34 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D d V/C V /T -0.30 - V Temperature Coefficient Reference to 25 C, I = 1 mA DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 13 A - 0.240 0.280 DS(on) GS D b Forward Transconductance g V = 50 V, I = 13 A 11 - - S fs DS D Dynamic Input Capacitance C - 3570 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 350- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -36- rss pF V = 1.0 V , f = 1.0 MHz - 4710 - DS Output Capacitance C oss V = 0 V V = 480 V , f = 1.0 MHz - 92 - GS DS Effective Output Capacitance C eff. V = 0 V to 480 V - 180 - oss DS Total Gate Charge Q - - 150 g I = 22 A, V = 480 V D DS Gate-Source Charge Q --V = 10 V 45 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --76 gd Turn-On Delay Time t -26 - d(on) Rise Time t V = 300 V, I = 22 A, -99 - r DD D ns R = 6.2, V = 10 V, g GS Turn-Off Delay Time t -48- d(off) b see fig. 10 Fall Time t -37- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 22 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 88 SM S b Body Diode Voltage V T = 25 C, I = 22 A, V = 0 V -- 1.5 V SD J S GS T = 25 C - 590 890 J Body Diode Reverse Recovery Time t ns rr T = 125 C - 670 1010 J I = 22 A, F b dI/dt = 100 A/s T = 25 C - 7.2 11 J Body Diode Reverse Recovery Charge Q C rr T =1 25 C - 8.5 13 J Reverse Recovery Current I T = 25 C - 26 39 RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91208 2 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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