IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 600 DS Requirement Available R ( )V = 10 V 0.24 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 150 g COMPLIANT Ruggedness Q (nC) 45 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 76 gd and Current Configuration Single Enhanced Body Diode dV/dt Capability D Compliant to RoHS Directive 2002/95/EC TO-247AC BENEFITS Hard Switching Primary or PFS Switch G Switch Mode Power Supply (SMPS) Uninterruptible Power Supply S D High Speed Power Switching S G Motor Drive N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP22N60KPbF Lead (Pb)-free SiHFP22N60K-E3 IRFP22N60K SnPb SiHFP22N60K ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 22 C Continuous Drain Current V at 10 V I GS D T = 100 C 14 A C a Pulsed Drain Current I 88 DM Linear Derating Factor 2.9 W/C b Single Pulse Avalanche Energy E 380 mJ AS a Repetitive Avalanche Current I 22 A AR a Repetitive Avalanche Energy E 37 mJ AR Maximum Power Dissipation T = 25 C P 370 W C D c Peak Diode Recovery dV/dt dV/dt 15 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1.5 mH, R = 25 , I = 22 A (see fig. 12). J g AS c. I 22 A, dI/dt 360 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 www.vishay.com S11-0445-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP22N60K, SiHFP22N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) -0.34 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D d V/C V /T -0.30 - V Temperature Coefficient Reference to 25 C, I = 1 mA DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 13 A - 0.240 0.280 DS(on) GS D b Forward Transconductance g V = 50 V, I = 13 A 11 - - S fs DS D Dynamic Input Capacitance C - 3570 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 350- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -36- rss pF V = 1.0 V , f = 1.0 MHz - 4710 - DS Output Capacitance C oss V = 0 V V = 480 V , f = 1.0 MHz - 92 - GS DS Effective Output Capacitance C eff. V = 0 V to 480 V - 180 - oss DS Total Gate Charge Q - - 150 g I = 22 A, V = 480 V D DS Gate-Source Charge Q --V = 10 V 45 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --76 gd Turn-On Delay Time t -26 - d(on) Rise Time t V = 300 V, I = 22 A, -99 - r DD D ns R = 6.2, V = 10 V, g GS Turn-Off Delay Time t -48- d(off) b see fig. 10 Fall Time t -37- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 22 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 88 SM S b Body Diode Voltage V T = 25 C, I = 22 A, V = 0 V -- 1.5 V SD J S GS T = 25 C - 590 890 J Body Diode Reverse Recovery Time t ns rr T = 125 C - 670 1010 J I = 22 A, F b dI/dt = 100 A/s T = 25 C - 7.2 11 J Body Diode Reverse Recovery Charge Q C rr T =1 25 C - 8.5 13 J Reverse Recovery Current I T = 25 C - 26 39 RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91208 2 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000