PD - 94112 IRFP064V HEXFET Power MOSFET l Advanced Process Technology D V = 60V l Ultra Low On-Resistance DSS l Dynamic dv/dt Rating l 175C Operating Temperature R = 5.5m DS(on) G l Fast Switching l Fully Avalanche Rated I = 130A D l Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to TO-247AC the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 130 D C GS I T = 100C Continuous Drain Current, V 10V 95 A D C GS I Pulsed Drain Current 520 DM P T = 25C Power Dissipation 250 W D C Linear Derating Factor 1.7 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 130 A AR E Repetitive Avalanche Energy 25 mJ AR dv/dt Peak Diode Recovery dv/dt 4.7 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.60 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient 40 JA www.irf.com 1 3/30/01IRFP064V Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.067 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.5 m V = 10V, I = 78A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 88 S V = 25V, I = 78A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 260 I = 130A g D Q Gate-to-Source Charge 68 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 94 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 26 V = 30V d(on) DD t Rise Time 200 I = 130A r D ns t Turn-Off Delay Time 100 R = 4.3 d(off) G t Fall Time 150 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance 5.0 D 6mm (0.25in.) nH G from package L Internal Source Inductance 13 S and center of die contact S C Input Capacitance 6760 V = 0V iss GS C Output Capacitance 1330 V = 25V oss DS C Reverse Transfer Capacitance 290 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1880310 mJ I = 130A, L = 37H AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 130 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 520 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 130A, V = 0V SD J S GS t Reverse Recovery Time 94 140 ns T = 25C, I = 130A rr J F Q Reverse Recovery Charge 360 540 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents operation outside rated limits. Starting T = 25C, L = 260H J This is a calculated value limited to T = 175C . J R = 25, I = 50A. (See Figure 12) G AS Calculated continuous current based on maximum allowable I 130A, di/dt 230A/s, V V , SD DD (BR)DSS junction temperature. Package limitation current is 90A. T 175C J 2 www.irf.com