IRFP26N60L, SiHFP26N60L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast body diode eliminates the need for V (V) 600 DS Available external diodes in ZVS applications R ()V = 10 V 0.21 DS(on) GS Lower gate charge results in simpler drive Available Q (Max.) (nC) 180 g requirements Q (nC) 61 gs Enhanced dV/dt capabilities offer improved ruggedness Q (nC) 85 gd Higher gate voltage threshold offers improved noise Configuration Single immunity D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-247AC Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For G example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. S APPLICATIONS S D G Zero voltage switching (SMPS) N-Channel MOSFET Telecom and server power supplies Uninterruptible power supplies Motor control applications ORDERING INFORMATION Package TO-247AC IRFP26N60LPbF Lead (Pb)-free SiHFP26N60L-E3 IRFP26N60L SnPb SiHFP26N60L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 26 C Continuous Drain Current V at 10 V I GS D T = 100 C 17 A C a Pulsed Drain Current I 100 DM Linear Derating Factor 3.8 W/C b Single Pulse Avalanche Energy E 570 mJ AS a Repetitive Avalanche Current I 26 A AR a Repetitive Avalanche Energy E 47 mJ AR Maximum Power Dissipation T = 25 C P 470 W C D c Peak Diode Recovery dV/dt dV/dt 21 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1.7 mH, R = 25 , I = 26 A, dV/dt = 21 V/ns (see fig. 12). J g AS c. I 26 A, dI/dt 480 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S15-0456-Rev. D, 16-Mar-15 Document Number: 91218 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP26N60L, SiHFP26N60L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.27 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.33 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 50 A DS GS Zero Gate Voltage Drain Current I DSS V = 480 V, V = 0 V, T = 125 C - - 2.0 mA DS GS J b Drain-Source On-State Resistance R V = 10 V I = 10 A -0.21 0.25 DS(on) GS D Forward Transconductance g V = 50 V, I = 16 A 13 - - S fs DS D Dynamic Input Capacitance C - 5020 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 450- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -34- rss pF Effective Output Capacitance C eff. - 230 - oss c V = 0 V V = 0 V to 480 V GS DS Effective Output Capacitance C eff. (ER) - 170 - oss (Energy related) Total Gate Charge Q -- 180 g I = 26 A, V = 480 V, D DS Gate-Source Charge Q --V = 10 V 61 nC gs GS b see fig. 7 and 15 Gate-Drain Charge Q --85 gd Turn-On Delay Time t -31 - d(on) V = 300 V, I = 26 A, DD D Rise Time t - 110 - r R = 4.3 ,V = 10 V ns g GS Turn-Off Delay Time t -4 b7- d(off) see fig. 11a and 11b Fall Time t -42- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 26 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 100 SM S b Body Diode Voltage V T = 25 C, I = 26 A, V = 0 V -- 1.5 V SD J S GS T = 25 C, I = 26 A - 170 250 J F Body Diode Reverse Recovery Time t ns rr b T = 125 C, dI/dt = 100 A/s - 210 320 J b T = 25 C, I = 26 A, V = 0 V - 670 1000 J F GS Body Diode Reverse Recovery Charge Q nC rr b T = 125 C, dI/dt = 100 A/s - 1050 1570 J Reverse Recovery Current I T = 25 C - 7.3 11 A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS C eff. (ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 % to 80 % V . oss oss DS DS S15-0456-Rev. D, 16-Mar-15 Document Number: 91218 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000