IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 400 DS Reduced Gate Drive Requirement Available R ()V = 10 V 0.20 Enhanced 30 V V Rating RoHS* DS(on) GS GS COMPLIANT Reduced C , C , C Q (Max.) (nC) 110 iss oss rss g Isolated Central Mounting Hole Q (nC) 28 gs Dynamic dV/dt Rated Q (nC) 45 gd Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a S new standard in power transistors for switching applications. D S G The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of N-Channel MOSFET TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ORDERING INFORMATION Package TO-247AC IRFP360LCPbF Lead (Pb)-free SiHFP360LC-E3 IRFP360LC SnPb SiHFP360LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 23 C Continuous Drain Current V at 10 V I GS D A T = 100 C 14 C a Pulsed Drain Current I 91 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 1200 mJ AS a Repetitive Avalanche Current I 23 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns , T - 55 to + 150 Operating Junction and Storage Temperature Range T J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.0 mH, R = 25 , I = 23 A (see fig. 12). DD J g AS c. I 23 A, dI/dt 170 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91227 www.vishay.com S11-0444-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP360LC, SiHFP360LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.49 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 GS(th) DS GS D V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 14 A -- 0.20 DS(on) GS D b Forward Transconductance g V = 50 V, I = 14 A 13 - - fs DS D S Dynamic Input Capacitance C - 3400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 540- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -42- rss Total Gate Charge Q - - 110 g I = 23 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 28 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --45 gd Turn-On Delay Time t -16 - d(on) Rise Time t -75 - r V = 200 V, I = 23 A , DD D ns b R = 4.3 , R = 7.9 , see fig. 10 Turn-Off Delay Time t -42- d(off) g D Fall Time t -50- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -13 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 23 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 92 SM S b Body Diode Voltage V T = 25 C, I = 23 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 400 600 ns rr b T = 25 C, I = 23 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -5.7 8.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91227 2 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000