X-On Electronics has gained recognition as a prominent supplier of IRFP460A MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFP460A MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFP460A Vishay

IRFP460A electronic component of Vishay
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See Product Specifications
Part No.IRFP460A
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRFP460APBF
Datasheet: IRFP460A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 12.9844
10 : USD 11.8046
25 : USD 10.9181
50 : USD 10.3246
100 : USD 10.0386
250 : USD 9.1448
500 : USD 8.9974
1000 : USD 8.9974
2500 : USD 8.58
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
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Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFP460A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFP460A and other electronic components in the MOSFETs category and beyond.

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IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 500 DS Available Requirement R ()V = 10 V 0.27 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 105 COMPLIANT g Ruggedness Q (nC) 26 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 42 and Current gd Configuration Single Effective C Specified oss Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-247 Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed Power Switching TYPICAL SMPS TOPOLOGIES S Full Bridge D S G PFC Boost N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP460APbF Lead (Pb)-free SiHFP460A-E3 IRFP460A SnPb SiHFP460A ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 20 C Continuous Drain Current V at 10 V I GS D T = 100 C 13 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 960 mJ AS a Repetitive Avalanche Current I 20 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 3.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 4.3 mH, R = 25 , I = 20 A (see fig. 12). J g AS c. I 20 A, dI/dt 125 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91234 www.vishay.com S09-1284-Rev. B, 13-Jul-09 1IRFP460A, SiHFP460A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 12 A -- 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 12 A 11 - - fs DS D S Dynamic Input Capacitance C - 3100 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 480- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss pF V = 1.0 V, f = 1.0 MHz 4430 DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz 130 GS DS c Effective Output Capacitance C eff. V = 0 V to 400 V 140 oss DS Total Gate Charge Q - - 105 g I = 20 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 26 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --42 gd Turn-On Delay Time t -18 - d(on) Rise Time t -55 - r V = 250 V, I = 20 A, DD D ns b Turn-Off Delay Time t -4R = 4.3 , R = 13 , see fig. 105- G D d(off) Fall Time t -39- f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I D -- 20 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 80 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 20A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 480 710 ns rr b T = 25 C, I = 20 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -5.0 7.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91234 2 S09-1284-Rev. B, 13-Jul-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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