IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 600 DS Reduced Gate Drive Requirement Available R ()V = 10 V 0.60 Enhanced 30 V V Rating DS(on) GS GS RoHS* Reduced C , C , C Q (Max.) (nC) 84 iss oss rss COMPLIANT g Isolated Central Mounting Hole Q (nC) 18 gs Dynamic dV/dt Rating Q (nC) 36 gd Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-247AC significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the S designer a new standard in power transistors for switching D S applications. G The TO-247AC package is preferred for N-Channel MOSFET commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. ORDERING INFORMATION Package TO-247AC IRFPC50LCPbF Lead (Pb)-free SiHFPC50LC-E3 IRFPC50LC SnPb SiHFPC50LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 11 C Continuous Drain Current V at 10 V I GS D T = 100 C 7.3 A C a Pulsed Drain Current I 44 DM Linear Derating Factor 1.5 W/C b Single Pulse Avalanche Energy E 920 mJ AS a Repetitive Avalanche Current I 11 A AR a Repetitive Avalanche Energy E 19 mJ AR Maximum Power Dissipation T = 25 C P 190 W C D c Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 13 mH, R = 25 , I = 11 A (see fig. 12). DD J g AS c. I 11 A, dI/dt 100 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91242 www.vishay.com S11-0443-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFPC50LC, SiHFPC50LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.65 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.6 A -- 0.60 DS(on) GS D b Forward Transconductance g V = 100 V, I = 6.6 A 7.0 - - S fs DS D Dynamic Input Capacitance C - 2300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 270- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -28- rss Total Gate Charge Q -- 84 g I = 11 A, V = 360 V, D DS Gate-Source Charge Q --V = 10 V 18 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --36 gd Turn-On Delay Time t -17 - d(on) Rise Time t -32 - r V = 300 V, I = 11 A , DD D ns b R = 6.2 , R = 30 , see fig. 10 Turn-Off Delay Time t -41- d(off) g D Fall Time t -26- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -13 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 11 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 44 SM p - n junction diode S b Body Diode Voltage V -- 1.4 V SD T = 25 C, I = 11 A, V = 0 V J S GS Body Diode Reverse Recovery Time t - 590 890 ns rr b T = 25 C, I = 11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -4.5 6.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91242 2 S11-0443-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000