IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 900 DS Available Repetitive Avalanche Rated R ()V = 10 V 3.7 DS(on) GS RoHS* Isolated Central Mounting Hole COMPLIANT Q (Max.) (nC) 78 g Fast Switching Q (nC) 10 gs Ease of Paralleling Q (nC) 42 gd Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247AC package is preferred for S commercial-industrial applications where higher power D levels preclude the use of TO-220AB devices. The S G TO-247AC is similar but superior to the earlier TO-218 N-Channel MOSFET package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC IRFPF30PbF Lead (Pb)-free SiHFPF30-E3 IRFPF30 SnPb SiHFPF30 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 900 DS V Gate-Source Voltage V 20 GS T = 25 C 3.6 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.3 A C a Pulsed Drain Current I 14 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 170 mJ AS a Repetitive Avalanche Current I 3.6 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 1.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 24 mH, R = 25 , I = 3.6 A (see fig. 12). DD J g AS c. I 3.6 A, dI/dt 70 A/s, V 600, T 150 C. SD DD J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91249 www.vishay.com S11-0442-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFPF30, SiHFPF30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 900 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 1.1 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - GSS GS 100 nA V = 900 V, V = 0 V - - DS GS 100 Zero Gate Voltage Drain Current I A DSS V = 720 V, V = 0 V, T = 125 C - - DS GS J 500 b Drain-Source On-State Resistance R V = 10 V I = 2.2 A -- 3.7 DS(on) GS D b Forward Transconductance g V = 100 V, I = 2.2 A 2.3 - - fs DS D S Dynamic Input Capacitance C - 1200 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 320- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -200- rss Total Gate Charge Q -- 78 g I = 3.6 A, V = 360 V D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --42 gd Turn-On Delay Time t -14 - d(on) Rise Time t -25 - r V = 450 V, I = 3.6 A, DD D ns b Turn-Off Delay Time t -9R = 12 , R = 120 , see fig. 100- g D d(off) Fall Time t -30- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 3.6 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 14 SM p - n junction diode S b Body Diode Voltage V -- 1.8 SD T = 25 C, I = 3.6 A, V = 0 V V J S GS Body Diode Reverse Recovery Time t - 430 650 rr ns b T = 25 C, I = 3.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.4 2.1 rr C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91249 2 S11-0442-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000