IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for V (V) 600 DS Available External Diodes in ZVS Applications R ( )V = 10 V 0.12 DS(on) GS RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Q (Max.) (nC) 320 Requirements g Q (nC) 85 Enhanced dV/dt Capabilities Offer Improved gs Ruggedness Q (nC) 160 gd Higher Gate Voltage Threshold Offers Improved Noise Configuration Single Immunity D Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS Zero Voltage Switching SMPS G Telecom and Server Power Supplies Uniterruptible Power Supplies S D Motor Control applications G S N-Channel MOSFET ORDERING INFORMATION Package Super-247 IRFPS38N60LPbF Lead (Pb)-free SiHFPS38N60L-E3 IRFPS38N60L SnPb SiHFPS38N60L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 38 C Continuous Drain Current V at 10 V I GS D T = 100 C 24 A C a Pulsed Drain Current I 150 DM Linear Derating Factor 4.3 W/C b Single Pulse Avalanche Energy E 680 mJ AS a Repetitive Avalanche Current I 38 A AR a Repetitive Avalanche Energy E 54 mJ AR Maximum Power Dissipation T = 25 C P 540 W C D c Peak Diode Recovery dV/dt dV/dt 19 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 12). b. Starting T = 25 C, L = 0.91 mH, R = 25 , I = 38 A, dV/dt = 13 V/ns (see fig. 14a). J g AS c. I 38 A, dI/dt 630 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91259 www.vishay.com S11-0111-Rev. B, 07-Feb-11 1IRFPS38N60L, SiHFPS38N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.22 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 410 - mV/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 50 A DS GS Zero Gate Voltage Drain Current I DSS V = 480 V, V = 0 V, T = 125 C - - 2.0 mA DS GS J b Drain-Source On-State Resistance R V = 10 V I = 23 A - 0.12 0.15 DS(on) GS D b Forward Transconductance g V = 50 V, I = 23 A 20 - - S fs DS D Dynamic Input Capacitance C V = 0 V, - 7990 - iss GS Output Capacitance C -V = 25 V, 740- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -72- rss pF Effective Output Capacitance C eff. - 350 - oss V = 0 V GS Effective Output Capacitance c V = 0 V to 480 V C eff. (ER) DS - 260 - oss (Energy Related) Total Gate Charge Q - - 320 g I = 38 A, V = 480 V D DS Gate-Source Charge Q --V = 10 V 85 nC gs GS b see fig. 7 and 15 Gate-Drain Charge Q --160 gd Gate Resistance R f = 1 MHz, open drain - 1.2 - G Turn-On Delay Time t -44 - d(on) V = 300 V, I = 38 A, DD D Rise Time t - 130 - r ns R = 4.3 , V = 10 V, G GS Turn-Off Delay Time t -92- d(off) b Fall Time t -6see fig. 11a and 11b9- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 38 S showing the A integral reverse G a Pulsed Diode Forward Current I - - 150 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 38 A, V = 0 V -- 1.5 V SD J S GS - 170 250 T = 25 C, I = 38 A J F Body Diode Reverse Recovery Time t ns rr b - 420 630 T = 125 C, dI/dt = 100 A/s J b - 830 1240 T = 25 C, I = 38 A, V = 0 V J F GS Body Diode Reverse Recovery Charge Q nC rr b - 2600 3900 T = 125 C, dI/dt = 100 A/s J Reverse Recovery Time I T = 25 C - 9.1 14 A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 12). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising form 0 % to 80 % V . oss oss DS DS C eff. (ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91259 2 S11-0111-Rev. B, 07-Feb-11