PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 7.5m DS(on) G Lead-Free I = 42A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient I-Pak D-Pak and reliable device for use in a wide variety of IRFU1010ZPbF IRFR1010ZPbF applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 91 GS D C Continuous Drain Current, V 10V I T = 100C 65 A GS D C Continuous Drain Current, V 10V (Package Limited) I T = 25C 42 GS D C Pulsed Drain Current I 360 DM P T = 25C Power Dissipation 140 W D C Linear Derating Factor 0.9 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 110 mJ AS (Thermally limited) E (Tested ) Single Pulse Avalanche Energy Tested Value 220 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.11 JC Junction-to-Ambient (PCB mount) R 40 C/W JA Junction-to-Ambient R 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.051 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.8 7.5 m V = 10V, I = 42A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D gfs Forward Transconductance 31 S V = 25V, I = 42A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 63 95 I = 42A g D Q Gate-to-Source Charge 17 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 23 V = 10V gd GS t Turn-On Delay Time 17 V = 28V d(on) DD t Rise Time 76 I = 42A r D t Turn-Off Delay Time 42 ns R = 7.6 d(off) G t Fall Time 48 V = 10V f GS D L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 2840 V = 0V iss GS C Output Capacitance 470 V = 25V oss DS C Reverse Transfer Capacitance 250 pF = 1.0MHz rss C Output Capacitance 1630 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 360 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 560 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 42 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 360 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 42A, V = 0V SD J S GS t Reverse Recovery Time 24 36 ns T = 25C, I = 42A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 20 30 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com