X-On Electronics has gained recognition as a prominent supplier of IRFPS40N50LPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFPS40N50LPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFPS40N50LPBF Vishay

IRFPS40N50LPBF electronic component of Vishay
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Part No.IRFPS40N50LPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRFPS40N50LPBF
Datasheet: IRFPS40N50LPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 12.9752
10 : USD 11.9245
25 : USD 11.4298
100 : USD 10.0706
500 : USD 8.9586
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Obsolete
0
MOQ : 2
Multiples : 2
2 : USD 6.9643
10 : USD 6.6857
30 : USD 6.6857
125 : USD 6.6857
300 : USD 6.6857
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0
MOQ : 500
Multiples : 500
500 : USD 9.2958
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 10.8296
10 : USD 9.6699
25 : USD 9.2745
100 : USD 8.3877
250 : USD 8.1312
500 : USD 8.003
1000 : USD 7.7252
2500 : USD 7.4794
5000 : USD 7.3512
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 8.198
3 : USD 5.9961
7 : USD 5.6719
25 : USD 5.614
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 8.8121
10 : USD 7.8045
25 : USD 7.6484
N/A

Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 10.3678
N/A

Obsolete
0
MOQ : 2
Multiples : 1
2 : USD 8.4449
10 : USD 7.2925
25 : USD 6.8539
100 : USD 6.7168
N/A

Obsolete
0
MOQ : 2
Multiples : 1
2 : USD 8.3676
10 : USD 7.226
25 : USD 6.7905
100 : USD 6.6548
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFPS40N50LPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFPS40N50LPBF and other electronic components in the MOSFETs category and beyond.

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IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for V (V) 500 DS External Diodes in ZVS Applications Available R ( )V = 10 V 0.087 DS(on) GS RoHS* Lower Gate Charge Results in Simpler Drive Q (Max.) (nC) 380 g COMPLIANT Requirements Q (nC) 80 gs Enhanced dV/dt Capabilities Offer Improved Ruggedness Q (nC) 190 gd Configuration Single Higher Gate Voltage Threshold Offers Improved Noise Immunity D Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS G Zero Voltage Switching SMPS S Telecom and Server Power Supplies D G Uninterruptible Power Supplies S Motor Control Applications N-Channel MOSFET ORDERING INFORMATION Package Super-247 IRFPS40N50LPbF Lead (Pb)-free SiHFPS40N50L-E3 IRFPS40N50L SnPb SiHFPS40N50L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 46 C Continuous Drain Current V at 10 V I GS D T = 100 C 29 A C a Pulsed Drain Current I 180 DM Linear Derating Factor 4.3 W/C b Single Pulse Avalanche Energy E 920 mJ AS a Repetitive Avalanche Current I 46 A AR a Repetitive Avalanche Energy E 54 mJ AR Maximum Power Dissipation T = 25 C P 540 W C D c Peak Diode Recovery dV/dt dV/dt 34 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 0.86 mH, R = 25 , I = 46 A (see fig. 12). J g AS c. I 46 A, dI/dt 550 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91260 www.vishay.com S11-0111-Rev. C, 07-Feb-11 1IRFPS40N50L, SiHFPS40N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT a -40 Maximum Junction-to-Ambient R thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS a -0.23 Maximum Junction-to-Case (Drain) R thJC Note a. R is measured at T approximately 90 C. th J SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static V Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS J DS D V Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS A V = 500 V, V = 0 V -- 50 DS GS Zero Gate Voltage Drain Current I DSS V = 400 V, V = 0 V, T = 125 C -- 2.0 mA DS GS J b Drain-Source On-State Resistance R V = 10 V I = 28 A - 0.087 0.100 DS(on) GS D Forward Transconductance g V = 50 V, I = 46 A 21 - - S fs DS D Dynamic Input Capacitance C - 8110 - iss V = 0 V, GS Output Capacitance - 960 - C V = 25 V, oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 130 - rss - 11200 - V = 1.0 V , f = 1.0 MHz DS pF Output Capacitance C oss V = 400 V , f = 1.0 MHz - 240 - DS V = 0 V Effective Output Capacitance GS - 440 - C eff. oss c V = 0 V to 400 V Effective Output Capacitance DS C (ER) - 310 - oss eff. (Energy Related) Total Gate Charge -- Q 380 g I = 46 A, V = 400 V, D DS nC Gate-Source Charge Q V = 10 V -- 80 gs GS b see fig. 7 and 15 Gate-Drain Charge -- Q 190 gd Internal Gate Resistance R f = 1 MHz, open drain - 0.90 - G Turn-On Delay Time t -27 - d(on) V = 250 V, I = 46 A, DD D Rise Time - 170 - t r ns R = 0.85 , V = 10 V, G GS Turn-Off Delay Time t -50 - b d(off) see fig. 14a and 14b Fall Time -69 - t f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 46 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 180 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 46 A, V = 0 V -- 1.5 V SD J S GS T = 25 C, I = 46 A - 170 250 J F Body Diode Reverse Recovery Time t ns rr b T = 125 C, dI/dt = 100 A/s - 220 330 J b T = 25 C, I = 46 A, V = 0 V - 705 1060 J S GS Body Diode Reverse Recovery Charge Q nC rr b T = 125 C, dI/dt = 100 A/s -1.3 2.0 J Reverse Recovery Current I T = 25 C - 9.0 - A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS C eff. (ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91260 2 S11-0111-Rev. C, 07-Feb-11

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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