IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for V (V) 500 DS External Diodes in ZVS Applications Available R ( )V = 10 V 0.087 DS(on) GS RoHS* Lower Gate Charge Results in Simpler Drive Q (Max.) (nC) 380 g COMPLIANT Requirements Q (nC) 80 gs Enhanced dV/dt Capabilities Offer Improved Ruggedness Q (nC) 190 gd Configuration Single Higher Gate Voltage Threshold Offers Improved Noise Immunity D Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS G Zero Voltage Switching SMPS S Telecom and Server Power Supplies D G Uninterruptible Power Supplies S Motor Control Applications N-Channel MOSFET ORDERING INFORMATION Package Super-247 IRFPS40N50LPbF Lead (Pb)-free SiHFPS40N50L-E3 IRFPS40N50L SnPb SiHFPS40N50L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 46 C Continuous Drain Current V at 10 V I GS D T = 100 C 29 A C a Pulsed Drain Current I 180 DM Linear Derating Factor 4.3 W/C b Single Pulse Avalanche Energy E 920 mJ AS a Repetitive Avalanche Current I 46 A AR a Repetitive Avalanche Energy E 54 mJ AR Maximum Power Dissipation T = 25 C P 540 W C D c Peak Diode Recovery dV/dt dV/dt 34 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 0.86 mH, R = 25 , I = 46 A (see fig. 12). J g AS c. I 46 A, dI/dt 550 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91260 www.vishay.com S11-0111-Rev. C, 07-Feb-11 1IRFPS40N50L, SiHFPS40N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT a -40 Maximum Junction-to-Ambient R thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS a -0.23 Maximum Junction-to-Case (Drain) R thJC Note a. R is measured at T approximately 90 C. th J SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static V Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS J DS D V Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS A V = 500 V, V = 0 V -- 50 DS GS Zero Gate Voltage Drain Current I DSS V = 400 V, V = 0 V, T = 125 C -- 2.0 mA DS GS J b Drain-Source On-State Resistance R V = 10 V I = 28 A - 0.087 0.100 DS(on) GS D Forward Transconductance g V = 50 V, I = 46 A 21 - - S fs DS D Dynamic Input Capacitance C - 8110 - iss V = 0 V, GS Output Capacitance - 960 - C V = 25 V, oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 130 - rss - 11200 - V = 1.0 V , f = 1.0 MHz DS pF Output Capacitance C oss V = 400 V , f = 1.0 MHz - 240 - DS V = 0 V Effective Output Capacitance GS - 440 - C eff. oss c V = 0 V to 400 V Effective Output Capacitance DS C (ER) - 310 - oss eff. (Energy Related) Total Gate Charge -- Q 380 g I = 46 A, V = 400 V, D DS nC Gate-Source Charge Q V = 10 V -- 80 gs GS b see fig. 7 and 15 Gate-Drain Charge -- Q 190 gd Internal Gate Resistance R f = 1 MHz, open drain - 0.90 - G Turn-On Delay Time t -27 - d(on) V = 250 V, I = 46 A, DD D Rise Time - 170 - t r ns R = 0.85 , V = 10 V, G GS Turn-Off Delay Time t -50 - b d(off) see fig. 14a and 14b Fall Time -69 - t f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 46 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 180 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 46 A, V = 0 V -- 1.5 V SD J S GS T = 25 C, I = 46 A - 170 250 J F Body Diode Reverse Recovery Time t ns rr b T = 125 C, dI/dt = 100 A/s - 220 330 J b T = 25 C, I = 46 A, V = 0 V - 705 1060 J S GS Body Diode Reverse Recovery Charge Q nC rr b T = 125 C, dI/dt = 100 A/s -1.3 2.0 J Reverse Recovery Current I T = 25 C - 9.0 - A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS C eff. (ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91260 2 S11-0111-Rev. C, 07-Feb-11