IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 600 DS Requirement Available R ( )V = 10 V 0.58 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Q (Max.) (nC) 70 g Ruggedness Q (nC) 19 gs Fully Characterized Capacitance and Avalanche Voltage and Current Q (nC) 28 gd Effective C Specified Configuration Single oss Compliant to RoHS Directive 2002/95/EC D TO-247AC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed Power Switching S D S G TYPICAL SMPS TOPOLOGY N-Channel MOSFET PFC Boost ORDERING INFORMATION Package TO-247AC IRFPC50APbF Lead (Pb)-free SiHFPC50A-E3 IRFPC50A SnPb SiHFPC50A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 11 C Continuous Drain Current V at 10 V I GS D T = 100 C 7.0 A C a Pulsed Drain Current I 44 DM Linear Derating Factor 1.4 W/C b Single Pulse Avalanche Energy E 920 mJ AS a Repetitive Avalanche Current I 11 A AR a Repetitive Avalanche Energy E 18 mJ AR = 25 C P 180 W Maximum Power Dissipation T C D c Peak Diode Recovery dV/dt dV/dt 4.9 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 15 mH, R = 25 , I = 11 A (see fig. 12). J g AS c. I 11 A, dI/dt 126 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91241 www.vishay.com S11-0443-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFPC50A, SiHFPC50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) -0.65 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.65 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A - - 0.58 DS(on) GS D b Forward Transconductance g V = 50 V, I = 6.0 A 7.7 - - S fs DS D Dynamic Input Capacitance C -2100 - iss V = 0 V, GS Output Capacitance C -2V = 25 V, 70- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -9.7- rss pF V = 1.0 V, f = 1.0 MHz - 2830 - DS Output Capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 74 - GS DS c Effective Output Capacitance C eff. V = 0 V to 480 V -81 - oss DS Total Gate Charge Q -- 70 g I = 11 A, V = 480 V D DS Gate-Source Charge Q --V = 10 V 19 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --28 gd Turn-On Delay Time t -15 - d(on) Rise Time t V = 300 V, I = 11 A -40 - r DD D ns R = 6.2 , R = 30 g D Turn-Off Delay Time t -33- d(off) b see fig. 10 Fall Time t -29- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 11 S showing the A G integral reverse a S Pulsed Diode Forward Current I -- 44 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 11 A, V = 0 V -- 1.4 V SD J S GS Body Diode Reverse Recovery Time t - 500 740 ns rr T = 25 C, I = 11 A, J F b dI/dt = 100 A/s Body Diode Reverse Recovery Charge Q -4.0 6.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91241 2 S11-0443-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000