IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 400 DS Available Reduced Gate Drive Requirement R ()V = 10 V 0.30 Enhanced 30V V Rating DS(on) GS GS RoHS* COMPLIANT Reduced C , C , C Q (Max.) (nC) 76 iss oss rss g Isolated Central Mounting Hole Q (nC) 20 gs Dynamic dV/dt Rated Q (nC) 37 gd Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-247AC significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a S new standard in power transistors for switching D S G applications. The TO-247AC package is preferred for N-Channel MOSFET commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ORDERING INFORMATION Package TO-247AC IRFP350LCPbF Lead (Pb)-free SiHFP350LC-E3 IRFP350LC SnPb SiHFP350LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 16 C Continuous Drain Current V at 10 V I GS D T = 100 C 9.9 A C a I 64 Pulsed Drain Current DM Linear Derating Factor 1.5 W/C b Single Pulse Avalanche Energy E 390 mJ AS a Repetitive Avalanche Current I 16 A AR a Repetitive Avalanche Energy E 19 mJ AR Maximum Power Dissipation T = 25 C P 190 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 2.7 mH, R = 25 , I = 16 A (see fig. 12). DD J g AS c. I 16 A, dI/dt 200 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91224 www.vishay.com S11-0448-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP350LC, SiHFP350LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.65 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.49 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 9.6 A -- DS(on) GS D 0.30 b Forward Transconductance g V = 50 V, I = 9.6 A 8.1 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 2200 - GS iss Output Capacitance C -V = 25 V, 390- pF oss DS Reverse Transfer Capacitance C -31- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 76 g I = 16 A, V = 320 V D DS Gate-Source Charge Q --V = 10 V 20 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --37 gd Turn-On Delay Time t -14 - d(on) Rise Time t -54 - r V = 200 V, I = 16 A, DD D ns Turn-Off Delay Time t -33- d(off) b R = 6.2 , R = 12 , see fig. 10 g D Fall Time t -35- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 16 S showing the A G integral reverse a I -- 64 Pulsed Diode Forward Current SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 16 A, V = 0 V 1.6 V J S GS Body Diode Reverse Recovery Time t - rr 440 660 ns b T = 25 C, I = 16 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 4.1 6.2 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91224 2 S11-0448-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000