IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for V (V) 500 DS External Diodes in ZVS Applications Available R ( )V = 10 V 0.15 DS(on) GS RoHS* Lower Gate Charge Results in Simpler Drive Q (Max.) (nC) 210 g COMPLIANT Requirements Q (nC) 58 gs Enhanced dV/dt Capabilities Offer Improved Ruggedness Q (nC) 100 gd Configuration Single Higher Gate Voltage Threshold Offers Improved Noise Immunity D Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS G Zero Voltage Switching SMPS Telecom and Server Power Supplies S D Uninterruptible Power Supplies S G Motor Control Applications N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP31N50LPbF Lead (Pb)-free SiHFP31N50L-E3 IRFP31N50L SnPb SiHFP31N50L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 31 C Continuous Drain Current V at 10 V I GS D T = 100 C 20 A C a Pulsed Drain Current I 124 DM Linear Derating Factor 3.7 W/C b Single Pulse Avalanche Energy E 460 mJ AS a Repetitive Avalanche Current I 31 A AR a Repetitive Avalanche Energy E 46 mJ AR Maximum Power Dissipation T = 25 C P 460 W C D c Peak Diode Recovery dV/dt dV/dt 19 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1 mH, R = 25 , I = 31 A (see fig. 12). J g AS c. I 31 A, dI/dt 422 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91220 www.vishay.com S11-0488-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP31N50L, SiHFP31N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.26 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static V Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.28 - V/C V DS DS J D 5.0 V Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - GS(th) DS GS D 100 nA Gate-Source Leakage I V = 30 V - - GSS GS V = 500 V, V = 0 V - - 50 A DS GS Zero Gate Voltage Drain Current I DSS 2.0 mA V = 400 V, V = 0 V, T = 125 C - - DS GS J b 0.18 Drain-Source On-State Resistance R V = 10 V I = 19 A -0.15 DS(on) GS D b Forward Transconductance g V = 50 V, I = 19 A 15 - - S fs DS D Dynamic Input Capacitance C - 5000 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 553- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -59- rss pF V = 1.0 V , f = 1.0 MHz - 6630 - DS Output Capacitance C oss V = 400 V , f = 1.0 MHz - 155 - DS V = 0 V GS Effective Output Capacitance C eff. - 276 - oss c V = 0 V to 400 V DS Effective Output Capacitance C -200- oss eff. (ER) Total Gate Charge Q - - 210 g I = 31 A, V = 400 V, D DS nC Gate-Source Charge Q V = 10 V -- 58 gs GS b see fig. 7 and 13 Gate-Drain Charge Q - - 100 gd Internal Gate Resistance R f = 1 MHz, open drain - 1.1 - g Turn-On Delay Time t -28 - d(on) Rise Time t - 115 - r V = 250 V, I = 31 A, DD D ns b R = 4.3 , see fig. 10 Turn-Off Delay Time t -5g 4- d(off) Fall Time t -53- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 31 S showing the A integral reverse G a Pulsed Diode Forward Current I - - 124 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 31 A, V = 0 V -- 1.5 V SD J S GS T = 25 C, I = 31 A - 170 250 J F Body Diode Reverse Recovery Time t ns rr b T = 125 C, dI/dt = 100 A/s - 220 330 J b T = 25 C, I = 31 A, V = 0 V - 570 860 J S GS nC Body Diode Reverse Recovery Charge Q rr b T = 125 C, dI/dt = 100 A/s -1.2 1.8 J C Reverse Recovery Current I T = 25 C - 7.9 12 A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS C eff. (ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91220 2 S11-0488-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000