IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available Isolated Central Mounting Hole R ()V = 10 V 0.018 DS(on) GS RoHS* 175 C Operating Temperature COMPLIANT Q (Max.) (nC) 110 g Ease of Paralleling Q (nC) 29 gs Simple Drive Requirements Q (nC) 38 gd Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the TO-247AC designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The S D TO-247AC is similar but superior to the earlier TO-218 S G package because its isolated mounting hole. It also provides N-Channel MOSFET greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC IRFP048PbF Lead (Pb)-free SiHFP048-E3 IRFP048 SnPb SiHFP048 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS e Continuous Drain Current T = 25 C 70 C V at 10 V I GS D Continuous Drain Current T = 100 C 52 A C a Pulsed Drain Current I 290 DM Linear Derating Factor 1.3 W/C b Single Pulse Avalanche Energy E 200 mJ AS Maximum Power Dissipation T = 25 C P 190 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 43 H, R = 25 , I = 73 A (see fig. 12). DD J g AS c. I 72 A, dI/dt 200 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Current limited by the package (die current = 73 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91198 www.vishay.com S11-0447-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP048, SiHFP048 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.80 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - GSS GS 100 nA V = 60 V, V = 0 V - - DS GS 25 Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 44 A -- 0.018 DS(on) GS D b Forward Transconductance g V = 25 V, I = 44 A 20 - - fs DS D S Dynamic Input Capacitance C - 2400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 1300- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -190- rss Total Gate Charge Q - - 110 g I = 72 A, V = 48 V D DS Gate-Source Charge Q --V = 10 V 29 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --38 gd Turn-On Delay Time t -8.1 - d(on) Rise Time t - 250 - r V = 30 V, I = 72 A, DD D ns b Turn-Off Delay Time t -R = 9.1 , R = 0.34 , see fig. 10210- g D d(off) Fall Time t -250- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D c Continuous Source-Drain Diode Current I -- 70 S showing the A integral reverse G a Pulsed Diode Forward Current I - - 290 SM p - n junction diode S b Body Diode Voltage V -- 2.0 SD T = 25 C, I = 73 A, V = 0 V V J S GS Body Diode Reverse Recovery Time t - 120 180 rr ns b T = 25 C, I = 72 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.50 0.80 rr C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Current limited by the package (die current = 73 A). www.vishay.com Document Number: 91198 2 S11-0447-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000