HEXFET Power MOSFET Surface Mount Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS Dynamic dv/dt Rating Fast Switching R = 0.075 DS(on) Fully Avalanche Rated G Lead-Free I = 2.8A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- SOT-223 and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V** 4.0 D A GS I T = 25C Continuous Drain Current, V 10V* 2.8 D A GS I T = 70C Continuous Drain Current, V 10V* 2.3 D A GS I Pulsed Drain Current 11.2 DM P T = 25C Power Dissipation (PCB Mount)** 2.1 W D A P T = 25C Power Dissipation (PCB Mount)* 1.0 W D A Linear Derating Factor (PCB Mount)* 8.3 mW/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 214 mJ AS I Avalanche Current 2.8 A AR E Repetitive Avalanche Energy * 0.1 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Amb. (PCB Mount, steady state)* 90 120 JA R Junction-to-Amb. (PCB Mount, steady state)** 50 60 JA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 IRFL024NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.075 V = 10V, I = 2.8A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 3.0 S V = 25V, I = 1.68A fs DS D 25 V = 55V, V = 0V DS GS A 250 V = 44V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 18.3 I = 1.68A g D Q Gate-to-Source Charge 3.0 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 7.7 V = 10V, See Fig. 6 and 9 gd GS t Turn-On Delay Time 8.1 V = 28V d(on) DD t Rise Time 13.4 I = 1.68A r D t Turn-Off Delay Time 22.2 R = 24 d(off) G t Fall Time 17.7 R = 17, See Fig. 10 f D C Input Capacitance 400 V = 0V iss GS C Output Capacitance 145 pF V = 25V oss DS C Reverse Transfer Capacitance 60 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S (Body Diode) showing the I Pulsed Source Current integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I =1.68A, V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = 1.68A rr J F Q Reverse RecoveryCharge 50 75 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I , di/dt 155A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 150C J Starting T = 25C, L = 54.7 mH Pulse width 300s duty cycle 2%. J R = 25, I = 2.8A. (See Figure 12) G AS 2 www.irf.com