X-On Electronics has gained recognition as a prominent supplier of IRFM440 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFM440 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFM440 Infineon

IRFM440 electronic component of Infineon

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Part No.	IRFM440
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET Power MOSFET with low on-resistance and high current capacity.
Datasheet:	IRFM440 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 163.7622 ea
Line Total: USD 8188.11

Availability - 0

MOQ: 50 Multiples: 50
Pack Size: 50

IRFM440 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 50 Multiples : 50	50 : USD 163.7622 10 : USD 136.5189 50 : USD 122.8256 100 : USD 118.3514 250 : USD 109.2756

We are delighted to provide the IRFM440 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFM440 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IRFM440 is a standard rated, medium voltage MOSFET (metal oxide semiconductor field effect transistor) designed for high frequency switching applications. It is suitable for use in a variety of high power and DC-DC converters, making it an ideal solution for renewable and smart grid applications that require high reliability, medium voltage switching capability. The device features a low on-resistance of 110 mO (typical) at 100V and a low gate charge (Qg) of 31 nC (typical). It is offered in an TO220 package and can operate at up to 100V drain-source voltage and 8A drain current. Other features include excellent EMC and ESD performance, temperature independent on-resistance, temperature independent gate charge, low gate resistance and fast switching times.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Id - Continuous Drain Current 8 A 8 A
Vds - Drain-Source Breakdown Voltage 500 V 500 V
Rds On - Drain-Source Resistance 950 mOhms 950 mOhms
Transistor Polarity n - channel n - channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 125 W 125 W
Mounting Style through hole through hole
Package / Case TO - 254 - 3 TO - 254 - 3
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode enhancement enhancement
Configuration single single
Height 13.84 mm 13.84 mm
Length 13.84 mm 13.84 mm
Transistor Type 1 n - channel 1 n - channel
Width 6.6 mm 6.6 mm
Brand Infineon / Ir Infineon / Ir
Fall Time 51 ns 51 ns
Rise Time 73 ns 73 ns
Typical Turn-Off Delay Time 72 ns 72 ns
Typical Turn-On Delay Time 21 ns 21 ns