X-On Electronics has gained recognition as a prominent supplier of IRFL110TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFL110TRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFL110TRPBF Vishay

Hot IRFL110TRPBF electronic component of Vishay
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Part No.IRFL110TRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Datasheet: IRFL110TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4605 ea
Line Total: USD 0.46 
Availability - 5399
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3055
5000 : USD 0.3055
7500 : USD 0.3055
10000 : USD 0.3055
12500 : USD 0.3055

5399
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4605
10 : USD 0.3667
30 : USD 0.3249
100 : USD 0.275
500 : USD 0.2521
1000 : USD 0.2397

28900
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8257
10 : USD 0.583
100 : USD 0.5485

1844
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.148
5 : USD 0.63
50 : USD 0.504
54 : USD 0.3262
148 : USD 0.308

2425
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.7325

9700
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4774

19400
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4628

19400
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3926
5000 : USD 0.371
7500 : USD 0.3687

340
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 37
Multiples : 1
37 : USD 1.1082
81 : USD 0.5022
100 : USD 0.429
200 : USD 0.4062

2425
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.7491

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRFL110TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFL110TRPBF and other electronic components in the MOSFETs category and beyond.

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IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 Repetitive avalanche rated G D Fast switching Available Ease of paralleling S Simple drive requirements D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: FB designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. V (V) 100 The SOT-223 package is designed for surface-mounting DS using vapor phase, infrared, or wave soldering techniques. R ( )V = 10 V 0.54 DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 8.3 g pick-and-place as with other SOT or SOIC packages bu t has the added advantage of improved thermal performance Q (nC) 2.3 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 3.8 gd greater than 1.25 W is possible in a typical surface moun t Configuration Single application. ORDERING INFORMATION Package SOT-223 a SiHFL110TR-GE3 a, b Lead (Pb)-free and halogen-free SiHFL110TR-BE3 a, b IRFL110TRBF-BE3 a Lead (Pb)-free IRFL110TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 1.5 C Continuous drain current V at 10 V I GS D T = 100 C 0.96 A C a Pulsed drain current I 12 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 150 mJ AS a Avalanche current I 1.5 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 25 mH, R = 25 , I = 3.0 A (see fig. 12) DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. F, 05-Apr-2021 Document Number: 91192 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL110, SiHFL110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 0.90 A - - 0.54 DS(on) GS D Forward transconductance g V = 50 V, I = 0.90 A 1.1 - - S fs DS D Dynamic Input capacitance C - 180 - iss V = 0 V, GS Output capacitance C -8V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --3.8 gd Turn-on delay time t -6.9 - d(on) Rise time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 Turn-off delay time t -1g D 5- d(off) Fall time t -9.4- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 1.5 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 12 SM S b Body diode voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.44 0.88 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. F, 05-Apr-2021 Document Number: 91192 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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