PMGD290UCEA Nexperia

PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V I = -400 mA T = 25 C - 670 850 m DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 725 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -20 V DS j Scan or click this QR code to view the latest information for this productNXP Semiconductors PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 G1 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD290UCEA TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 PMGD290UCEA YD% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T = 25 C - 20 V DS j V gate-source voltage -8 8 V GS PMGD290UCEA All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 28 March 2014 2 / 21