PMK35EP,518 NXP

PMK35EP P-channel TrenchMOS extremely low level FET Rev. 02 29 April 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance 1.3 Applications Battery management Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source 25 C T 150 C - - -30 V DS j voltage I drain current T =25C V = -10 V see ---14. A D sp GS Figure 1 see Figure 3 9 P total power T =25C see Figure 2 --6.9 W tot sp dissipation Static characteristics R drain-source V =-10 V I =-9.2A - 1619m DSon GS D on-state T =25C see Figure 9 j resistance Dynamic characteristics Q gate-drain charge V =-10 V I =-9.2A -6 -nC GD GS D V =-15 V T =25C DS j see Figure 11 see Figure 12PMK35EP Nexperia P-channel TrenchMOS extremely low level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 8 5 2S source 3S source 4 G gate G 5 D drain 1 4 S 6 D drain SOT96-1 (SO8) 001aaa025 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMK35EP SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 150C ---30 V DS j V drain-gate voltage 25 C T 150 C R =20k ---30 V DGR j GS V gate-source voltage -25 - 25 V GS I drain current T =25 C V = -10 V see Figure 1 ---14.9A D sp GS see Figure 3 T = 100 C V = -10 V see Figure 1 ---7 A sp GS I peak drain current T =25 C t 10 s pulsed ---28.8A DM sp p see Figure 3 P total power dissipation T =25 C see Figure 2 --6.9 W tot sp T storage temperature -55 - 150 C stg T junction temperature -55 - 150 C j Source-drain diode I source current T=25C ---5.8 A S sp I peak source current T =25 C t 10 s pulsed - - -23 A SM sp p PMK35EP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 29 April 2010 2 of 12