PMH950UPEH Nexperia

PMH950UPE 20 V, P-channel Trench MOSFET 5 April 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 0.62 0.37 mm 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -530 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1 1.4 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMH950UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 1 2 S source 3 D drain G 3 Transparent top view S DFN0606-3 (SOT8001) 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMH950UPE DFN0606-3 plastic, leadless ultra small package 3 terminals body 0.62 x SOT8001 0.62 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMH950UPE 0001 0100 reading direction pin 1 indication marking code reading example: (example) 1011 1101 reading direction aaa-029459 Fig. 1. DFN0606-3 (SOT8001) binary marking code description PMH950UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 5 April 2019 2 / 14