BUK6D385-100EX Nexperia

BUK6D385-100E 100 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range T = 175 C j Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 100 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 3.7 A D GS sp P total power dissipation T = 25 C - - 15 W tot sp Static characteristics R drain-source on-state V = 10 V I = 1.5 A T = 25 C - 280 385 m DSon GS D j resistanceNexperia BUK6D385-100E 100 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 3 G gate G 3 4 4 S source 8 5 D drain Transparent top view 6 D drain DFN2020MD6 (SOT1220) S 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6D385-100E DFN2020MD6 plastic, leadless thermal enhanced ultra thin small outline SOT1220 package 6 terminals 0.65 mm pitch 2 mm x 2 mm x 0.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BUK6D385-100E 4U BUK6D385-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 29 April 2019 2 / 15