Advance Technical Information X4-Class V = 150V IXTT240N15X4HV DSS TM Power MOSFET I = 240A IXTH240N15X4 D25 R 4.4m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 175 C 150 V DSS J D (Tab) V T = 25 C to 175 C, R = 1M 150 V DGR J GS TO-247 (IXTH) V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 240 A D25 C I External Lead Current Limit 160 A G L(RMS) D I T = 25 C, Pulse Width Limited by T 420 A DM C JM S D (Tab) I T = 25 C 120 A A C E T = 25 C 1.2 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25 C 940 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low R and Q SOLD DS(ON) G Avalanche Rated M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-268HV 4 g TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 150C 1.5 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 3.6 4.4 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100908A(6/18) IXTT240N15X4HV IXTH240N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 90 150 S fs DS D R Gate Input Resistance 1.2 Gi C 8900 pF iss C V = 0V, V = 25V, f = 1MHz 1450 pF oss GS DS C 6 pF rss Effective Output Capacitance C 1020 pF o(er) Energy related V = 0V GS C 4100 pF V = 0.8 V o(tr) Time related DS DSS t 30 ns d(on) Resistive Switching Times t 8 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 92 ns d(off) R = 2 (External) G t 7 ns f Q 195 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 52 nC gs GS DS DSS D D25 Q 50 nC gd R 0.16 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 240 A S GS I Repetitive, pulse Width Limited by T 960 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 130 ns rr I = 120A, -di/dt = 100A/ s F Q 0.6 C RM V = 100V R I 9.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537