X4-Class V = 150V IXTA100N15X4 DSS TM Power MOSFET I = 100A IXTP100N15X4 D25 R 11.5m DS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-263 (IXTA) S G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 175 C 150 V TO-220 DSS J (IXTP) V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25 C 100 A D D25 C S D (Tab) I T = 25 C, Pulse Width Limited by T 180 A DM C JM I T = 25 C50A G = Gate D = Drain A C S = Source Tab = Drain E T = 25 C 800 mJ AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 375 W D C Features T -55 ... +175 C J T 175 C JM International Standard Packages T -55 ... +175 C stg Low R and Q DS(ON) G T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Advantages Weight TO-263 2.5 g High Power Density TO-220 3.0 g Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 250A 150 V DSS GS D Power Supplies V V = V , I = 250A 2.5 4.5 V DC-DC Converters GS(th) DS GS D PFC Circuits I V = 20V, V = 0V 100 nA GSS GS DS AC and DC Motor Drives Robotics and Servo Controls I V = V , V = 0V 10 A DSS DS DSS GS T = 150C 500 A J R V = 10V, I = 0.5 I , Notes 1 & 2 9.2 11.5 m DS(on) GS D D25 2019 IXYS CORPORATION, All Rights Reserved DS100903B(11/19) IXTA100N15X4 IXTP100N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 50A, Note 1 58 96 S fs DS D R Gate Input Resistance 4.1 Gi C 3970 pF iss C V = 0V, V = 25V, f = 1MHz 650 pF oss GS DS C 1.1 pF rss Effective Output Capacitance C 450 pF Energy related o(er) V = 0V GS C 1760 pF V = 0.8 V o(tr) Time related DS DSS t 18 ns d(on) Resistive Switching Times t 7 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 120 ns d(off) R = 10 (External) G t 10 ns f Q 74 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 18 nC gd R 0.40 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 100 A S GS I Repetitive, pulse Width Limited by T 400 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 90 ns rr I = 50A, -di/dt = 100A/ s F Q 300 nC RM V = 100V R I 6.7 A RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537