NVMFS5H663NLT1G ON Semiconductor

NVMFS5H663NL, NVMFS5H663NLWF MOSFET Power, Single N-Channel 60 V, 7.2 m , 67 A www.onsemi.com NVMFS5H663NLWF Wettable Flank Option for Enhanced Optical Inspection. V R MAX I MAX Features (BR)DSS DS(ON) D Small Footprint (5x6 mm) for Compact Design 7.2 m 10 V 60 V 67 A Low R to Minimize Conduction Losses DS(on) 10 m 4.5 V Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D (5) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G (4) DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS S (1,2,3) Continuous Drain T = 25C I 67 A C D Current R JC NCHANNEL MOSFET T = 100C 47 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 63 W C D R (Note 1) JC MARKING T = 100C 31.3 C DIAGRAM Continuous Drain T = 25C I 16.2 A A D D Current R JA 1 T = 100C 11.4 (Notes 1, 2, 3) A S D Steady DFN5 S XXXXXX State Power Dissipation T = 25C P 3.7 W A D AYWZZ (SO8FL) S R (Notes 1 & 2) JA T = 100C 1.8 CASE 488AA G D A STYLE 1 D Pulsed Drain Current T = 25C, t = 10 s I 359 A DM A p 5H663L = (NVMFS5H663NL) or Operating Junction and Storage Temperature T , T 55 to C J stg 663LWF = (NVMFS5H663NLWF) +175 A = Assembly Location Source Current (Body Diode) I 52 A Y = Year S W = Work Week Single Pulse DraintoSource Avalanche E 274 mJ AS ZZ = Lot Traceability Energy (I = 3.8 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering, marking and shipping information in the device. If any of these limits are exceeded, device functionality should not be package dimensions section on page 6 of this data sheet. assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 2.4 C/W JC JunctiontoAmbient Steady State (Note 2) R 41 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 2 NVMFS5H663NL/DNVMFS5H663NL, NVMFS5H663NLWF 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com 2