X-On Electronics has gained recognition as a prominent supplier of IXTT240N15X4HV MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTT240N15X4HV MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTT240N15X4HV IXYS

IXTT240N15X4HV electronic component of IXYS
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Part No.IXTT240N15X4HV
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 150V240A Ultra Junction X4-Class Power MOSFET TO-268HV
Datasheet: IXTT240N15X4HV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 22.7007 ea
Line Total: USD 22.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 49.1342
10 : USD 43.6987
100 : USD 37.3165
500 : USD 33.8794

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 22.7007
10 : USD 20.9402
30 : USD 19.9978
120 : USD 17.8747

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTT240N15X4HV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTT240N15X4HV and other electronic components in the MOSFETs category and beyond.

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Advance Technical Information X4-Class V = 150V IXTT240N15X4HV DSS TM Power MOSFET I = 240A IXTH240N15X4 D25 R 4.4m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 175 C 150 V DSS J D (Tab) V T = 25 C to 175 C, R = 1M 150 V DGR J GS TO-247 (IXTH) V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 240 A D25 C I External Lead Current Limit 160 A G L(RMS) D I T = 25 C, Pulse Width Limited by T 420 A DM C JM S D (Tab) I T = 25 C 120 A A C E T = 25 C 1.2 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25 C 940 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low R and Q SOLD DS(ON) G Avalanche Rated M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-268HV 4 g TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 150C 1.5 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 3.6 4.4 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100908A(6/18) IXTT240N15X4HV IXTH240N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 90 150 S fs DS D R Gate Input Resistance 1.2 Gi C 8900 pF iss C V = 0V, V = 25V, f = 1MHz 1450 pF oss GS DS C 6 pF rss Effective Output Capacitance C 1020 pF o(er) Energy related V = 0V GS C 4100 pF V = 0.8 V o(tr) Time related DS DSS t 30 ns d(on) Resistive Switching Times t 8 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 92 ns d(off) R = 2 (External) G t 7 ns f Q 195 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 52 nC gs GS DS DSS D D25 Q 50 nC gd R 0.16 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 240 A S GS I Repetitive, pulse Width Limited by T 960 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 130 ns rr I = 120A, -di/dt = 100A/ s F Q 0.6 C RM V = 100V R I 9.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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