X-On Electronics has gained recognition as a prominent supplier of IXTA150N15X4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTA150N15X4 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTA150N15X4 IXYS

IXTA150N15X4 electronic component of IXYS
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Part No.IXTA150N15X4
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 150V150A Ultra Junction X4-Class Power MOSFET TO-263
Datasheet: IXTA150N15X4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.925 ea
Line Total: USD 17.92 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 17.925
10 : USD 15.816
100 : USD 13.357
500 : USD 11.882
1000 : USD 10.8986

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 15.0257
10 : USD 13.26
50 : USD 12.7044
100 : USD 11.1871

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTA150N15X4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTA150N15X4 and other electronic components in the MOSFETs category and beyond.

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Advance Technical Information X4-Class V = 150V IXTA150N15X4 DSS TM Power MOSFET I = 150A IXTA150N15X4-7 D25 R 6.9m DS(on) N-Channel Enhancement Mode TO-263 Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 150 V G = Gate D = Drain DSS J S = Source Tab = Drain V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS TO-263 (7-Leads) V Transient 30 V GSM I T = 25 C 150 A D25 C 1 I External Lead Current Limit 120 A L(RMS) I T = 25 C, Pulse Width Limited by T 260 A DM C JM 7 I T = 25 C75A D (Tab) A C E T = 25 C1J AS C Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J 4 (Tab) - Drain P T = 25 C 480 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low R and Q SOLD DS(ON) G Avalanche Rated F Mounting Force 10..65 / 2.2..14.6 N/lb C Low Package Inductance Weight TO-263 2.5 g TO-263 (7Leads) 3.0 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS PFC Circuits T = 150C 500 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 6.9 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved. DS100909A(6/18) IXTA150N15X4 IXTA150N15X4-7 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 70 120 S fs DS D R Gate Input Resistance 1.3 Gi C 5500 pF iss C V = 0V, V = 25V, f = 1MHz 900 pF oss GS DS C 4 pF rss Effective Output Capacitance C 660 pF o(er) V = 0V Energy related GS C 2100 pF V = 0.8 V o(tr) DS DSS Time related t 23 ns d(on) Resistive Switching Times t 5 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 2 (External) G t 6 ns f Q 105 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 28 nC gd R 0.31 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 150 A S GS I Repetitive, pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 100 ns rr I = 75A, -di/dt = 100A/ s F Q 350 nC RM V = 75V R I 7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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