X-On Electronics has gained recognition as a prominent supplier of NVMFS6D1N08HT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS6D1N08HT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS6D1N08HT1G ON Semiconductor

NVMFS6D1N08HT1G electronic component of ON Semiconductor
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Part No.NVMFS6D1N08HT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T8 80V 1 PART PROLI FERATI
Datasheet: NVMFS6D1N08HT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.65 ea
Line Total: USD 975 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.65

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.013
10 : USD 1.5103
100 : USD 1.1288
500 : USD 0.931
1000 : USD 0.7353

   
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RoHS - XON
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Vds - Drain-Source Breakdown Voltage
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We are delighted to provide the NVMFS6D1N08HT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS6D1N08HT1G and other electronic components in the MOSFETs category and beyond.

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NVMFS6D1N08H Power MOSFET 80 V, 5.5 m , 89 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFSW6D1N08H Wettable Flank Option for Enhanced Optical Inspection AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free, Beryllium Free 80 V 5.5 m 10 V 89 A and are RoHS Compliant Typical Applications Synchronous Rectification D (5,6) ACDC and DCDC Power Supplies ACDC Adapters (USB PD) SR Load Switch G (4) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S (1,2,3) DraintoSource Voltage V 80 V DSS NCHANNEL MOSFET GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 89 A C D Current R (Note 1) JC Steady MARKING State Power Dissipation P 104 W D DIAGRAM R (Note 1) JC D 1 Continuous Drain T = 25C I 17 A A D S D Current R JA DFN5 S XXXXXX Steady (Notes 1, 2) AYWZZ (SO8FL) S State CASE 488AA Power Dissipation P 3.8 W G D D R (Notes 1, 2) STYLE 1 D JA Pulsed Drain Current T = 25C, t = 10 s I 468 A A p DM XXXXXX = 6D1N08 XXXXXX = (NVMFS6D1N08H) or Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXXXX = W6D1N8 XXXXXX = (NVMFSW6D1N08H) Source Current (Body Diode) I 87 A S A = Assembly Location Y = Year Single Pulse DraintoSource Avalanche E 465 mJ AS Energy (I = 5.9 A) W = Work Week AV ZZ = Lot Traceability Lead Temperature Soldering Reflow for Solder- T 300 C L ing Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information in the assumed, damage may occur and reliability may be affected. package dimensions section on page 6 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State (Note 1) R 1.44 JC JunctiontoAmbient Steady State (Note 1) R 40 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using 1 in pad size, 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2018 Rev. 0 NVMFS6D1N08H/DNVMFS6D1N08H ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 43.8 mV/C (BR)DSS D Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 80 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 120 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 7.08 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 20 A 4.5 5.5 m DS(on) GS D Forward Transconductance g V = 15 V, I = 20 A 80 S FS DS D GateResistance R T = 25C 1.0 G A CHARGES & CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, V = 40 V 2085 pF ISS GS DS Output Capacitance C 300 OSS Reverse Transfer Capacitance C 10 RSS Total Gate Charge Q V = 6 V, V = 40 V, I = 30 A 10 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 40 V, I = 30 A 32 nC G(TOT) GS DS D GatetoSource Charge Q 10 GS GatetoDrain Charge Q 6 GD Plateau Voltage V 5 V GP SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t V = 10 V, V = 64 V, 18 ns d(ON) GS DS I = 30 A, R = 2.5 D G Rise Time t 50 r TurnOff Delay Time t 48 d(OFF) Fall Time t 39 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 20 A S T = 125C 0.7 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 49 ns RR GS S I = 20 A S Reverse Recovery Charge Q 60 nC RR Charge Time t V = 0 V, dI /dt = 100 A/ s, 30 ns a GS S I = 20 A S Discharge Time t 19 ns b Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures 2 4. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 1.5 in. board of FR4 material. R is guaranteed JA JC by design while R is determined by the users board design. CA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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