STL47N60M6 STMicroelectronics

STL47N60M6 Datasheet N-channel 600 V, 70 m typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package Features V R max. I Order code DS DS(on) D 5 STL47N60M6 600 V 82 m 31 A 4 3 Reduced switching losses 2 1 Lower R x area vs previous generation DS(on) Low gate input resistance PowerFLAT 8x8 HV 100% avalanche tested Zener-protected Drain(5) Excellent switching performance thanks to the extra driving source pin Applications Gate(1) Switching applications Driver Power source (2) Description source (3, 4) NG1DS2PS34D5Z The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STL47N60M6 Product summary Order code STL47N60M6 Marking 47N60M6 Package PowerFLAT 8x8 HV Packing Tape and reel DS12382 - Rev 2 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL47N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 31 A D C I Drain current (continuous) at T = 100 C 20 A D C (1) I Drain current (pulsed) 124 A DM P Total power dissipation at T = 25 C 190 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 31 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.66 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 2 1. When mounted on 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 5.3 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 800 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12382 - Rev 2 page 2/15