A Product Line of
Diodes Incorporated
DMN3730UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I 0.4mm Ultra Low Profile Package for Thin Application
D
V R
(BR)DSS DS(on)
2
T = +25C 0.6mm Package Footprint, 10 times Smaller than SOT23
A
0.9A Low V can be driven directly from a battery
460m @ V = 4.5V GS(th),
GS
30V
Low R
DS(on)
560m @ V = 2.5V 0.7A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET is designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications. Mechanical Data
Case: X2-DFN1006-3
Applications
Case Material: Molded Plastic, Green Molding Compound;
Load Switch UL Flammability Classification Rating 94V-0
Portable Applications Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe; Solderable
e4
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Drain
X2-DFN1006-3
Body
Diode
S
Gate
D
G
Gate
Protection
ESD PROTECTED TO 2kV
Source
Diode
Bottom View Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3730UFB4-7 NF 7 8 3,000
DMN3730UFB4-7B NF 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See NF
NF
NF
A Product Line of
Diodes Incorporated
DMN3730UFB4
Marking Information
From date code 1527 (YYWW),
NF
NF
this changes to:
Top View
Top View
Bar Denotes Gate and Source Side
Dot Denotes Drain Side
DMN3730UFB4-7
NF
Top View
NF = Part Marking Code
Bar Denotes Gate and Source Side
DMN3730UFB4-7B
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 30
V
DSS
V
Gate-Source Voltage 8
V
GSS
(Note 6) 0.91
I
D
Continuous Drain Current V = 4.5V T = +70C (Note 6) 0.73
GS A
A
(Note 5) 0.75
Pulsed Drain Current (Note 7) I 3
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 6) 0.69
Power Dissipation P W
D
(Note 5) 0.47
(Note 6) 180
Thermal Resistance, Junction to Ambient R C/W
JA
(Note 5) 258
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Notes: 5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
6. Same as note 4, except the device measured at t 10 seconds.
7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10s.
2 of 7
DMN3730UFB4 May 2015
Diodes Incorporated
www.diodes.com
Document number: DS35017 Rev. 8 - 2
NF
NF
NF
NF
NF
NF