X-On Electronics has gained recognition as a prominent supplier of IRFZ34SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFZ34SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFZ34SPBF Vishay

IRFZ34SPBF electronic component of Vishay
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Part No.IRFZ34SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs D2PAK (TO-263)
Datasheet: IRFZ34SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.656 ea
Line Total: USD 1.66 
Availability - 140
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
140
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.656
10 : USD 1.265
100 : USD 0.9361
500 : USD 0.7866
1000 : USD 0.7855

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFZ34SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFZ34SPBF and other electronic components in the MOSFETs category and beyond.

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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced process technology V (V) 60 DS Surface mount R ( )V = 10 V 0.050 DS(on) GS Low-profile through-hole (IRFZ34L, SiHFZ34L) Available Q (Max.) (nC) 46 g 175 C operating temperature Q (nC) 11 gs Fast switching Available Q (nC) 22 gd Material categorization: for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Note D * This datasheet provides information about parts that are 2 2 D PAK (TO-263) I PAK (TO-262) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION G G D S Third generation power MOSFETs from Vishay utilize D S G advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that S Power MOSFETs are well known for, provides the designer N-Channel MOSFET with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. The through-hole version (IRFZ34L, SiHFZ34L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and halogen-free SiHFZ34S-GE3 SiHFZ34STRL-GE3 SiHFZ34L-GE3 a Lead (Pb)-free IRFZ34SPbF IRFZ34STRLPbF IRFZ34LPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 30 C Continuous Drain Current V at 10 V I GS D T = 100 C 21 A C a, e Pulsed Drain Current I 120 DM Linear Derating Factor 0.59 W/C b, e Single Pulse Avalanche Energy E 200 mJ AS T = 25 C 88 C Maximum Power Dissipation P W D T = 25 C 3.7 A c, e Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, Starting T = 25 C, L = 260 H, R = 25 , I = 30 A (see fig. 12). DD J g AS c. I 30 A, dI/dt 200 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFZ34, SiHFZ34 data and test conditions. S15-1659-Rev. D, 20-Jul-15 Document Number: 90368 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA a (PCB mount) C / W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.065 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 18 A - - 0.05 DS(on) GS D b Forward Transconductance g V = 25 V, I = 18 A 9.3 - - S fs DS D Dynamic Input Capacitance C - 1200 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 600- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -100- rss Total Gate Charge Q -- 46 g I = 30 A, V = 48 V, D DS Gate-Source Charge Q --V = 10 V 11 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -13 - d(on) Rise Time t - 100 - r V = 30 V, I = 30 A, DD D ns b, c R = 12 , R = 1.0 , see fig. 10 g D Turn-Off Delay Time t -29- d(off) Fall Time t -52- f Internal Source Inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 30 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 120 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 30 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 120 230 ns rr b, c T = 25 C, I = 30 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 700 1400 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRFZ34, SiHFZ34 data and test conditions. S15-1659-Rev. D, 20-Jul-15 Document Number: 90368 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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