IRFZ48R www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology TO-220AB Available Ultra low on-resistance Dynamic dV/dt rating Available 175 C operating temperature G Fast switching Fully avalanche rated S Drop in replacement of the SiHFZ48 for linear / audio D G S applications Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are PRODUCT SUMMARY RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) 60 DS Please see the information / tables in this datasheet for details R ()V = 10 V 0.018 DS(on) GS DESCRIPTION Q (Max.) (nC) 110 g Advanced power MOSFETs from Vishay utilize advanced Q (nC) 29 gs processing techniques to achieve extremely low Q (nC) 36 gd on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Configuration Single Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFZ48RPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 50 C Continuous drain current V at 10 V I GS D T = 100 C 50 A C a Pulsed drain current I 290 DM Linear derating factor 1.3 W/C b Single pulse avalanche energy E 100 mJ AS a Repetitive avalanche current I 50 A AR a Repetitive avalanche energy E 19 mJ AR Maximum power dissipation T = 25 C P 190 W C D c Peak diode recovery dV/dt dV/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 22 H, R = 25 I = 72 A (see fig. 12) DD J g AS c. I 72 A, dV/dt 200 A/ms, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0340-Rev. C, 12-Apr-2021 Document Number: 91295 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ48R www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - DS GS D V V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - DS DS J D V/C Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 -- 100nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 43 A - - 0.018 DS(on) GS D b Forward transconductance g V = 25 V, I = 43 A 27 - - S fs DS D Dynamic Input capacitance C - 2400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 1300- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -190- rss Total gate charge Q - - 110 g I = 72 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 29 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --36 gd Turn-on delay time t -8.1 - d(on) Rise time t -250 - r V = 30 V, I = 72 A, DD D ns b R = 9.1 , R = 0.34 , see fig. 10 g D Turn-off delay time t -210- d(off) Fall time t -250- f Between lead, D Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 50 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode - - 290 SM S b Body diode voltage V T = 25 C, I = 72 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 120 180 ns rr b T = 25 C, I = 72 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.50 0.80 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0340-Rev. C, 12-Apr-2021 Document Number: 91295 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000