IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ()V = 5.0 V 0.16 DS(on) GS RoHS* Logic-Level Gate Drive Q (Max.) (nC) 28 COMPLIANT g R Specified at V = 4 V and 5 V DS(on) GS Q (nC) 3.8 gs 175 C Operating Temperature Q (nC) 14 gd Fast Switching Configuration Single Ease of Paralleling D Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost effectiveness. S The TO-220AB package is universally preferred for all D S G commercial-industrial applications at power dissipation N-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL530PbF Lead (Pb)-free SiHL530-E3 IRL530 SnPb SiHL530 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 15 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 11 A C a Pulsed Drain Current I 60 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 290 mJ AS a Repetitive Avalanche Current I 15 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C P 88 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 1.9 mH, R = 25 I = 15 A (see fig. 12). DD J g AS c. I 15 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91299 www.vishay.com S11-0518-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL530, SiHL530 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.14 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - GS(th) DS GS D 2.0 V Gate-Source Leakage I V = 10 -- 100nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 9.0 A -- 0.16 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 7.5 A -- 0.22 GS D b Forward Transconductance g V = 50 V, I = 9.0 A 6.4 - - fs DS D S Dynamic Input Capacitance C - 930 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 250- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -57- rss Total Gate Charge Q -- 28 g I = 15 A, V = 80 V, D DS Gate-Source Charge Q --V = 5.0 V 3.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --14 gd Turn-On Delay Time t -4.7 - d(on) Rise Time t - 100 - r V = 50 V, I = 15 A, DD D ns b Turn-Off Delay Time t -2R = 12 , R = 32 , see fig. 102- d(off) g D Fall Time t -48- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 15 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 60 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 15 A, V = 0 V -- 2.5 SD J S GS V Body Diode Reverse Recovery Time t - rr 150 200 ns b T = 25 C, I = 15 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.93 1.4 rr C Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91299 2 S11-0518-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000