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X-On Electronics has gained recognition as a prominent supplier of IRF510STRRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF510STRRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF510STRRPBF Vishay

IRF510STRRPBF electronic component of Vishay
IRF510STRRPBF Vishay
IRF510STRRPBF MOSFETs
IRF510STRRPBF  Semiconductors

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See Product Specifications
Part No. IRF510STRRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: IRF510STRRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.166 ea
Line Total: USD 1.17 
Availability - 837
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
837
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 1.166
10 : USD 0.9878
100 : USD 0.8008
500 : USD 0.7909
800 : USD 0.6116
2400 : USD 0.5819
4800 : USD 0.5819

552
Ship by Thu. 16 Jan to Wed. 22 Jan
MOQ : 104
Multiples : 1
104 : USD 0.6257

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF510STRRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF510STRRPBF and other electronic components in the MOSFETs category and beyond.

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IRF510S, SiHF510S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching Ease of paralleling D G Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 100 DS DESCRIPTION R ( )V = 10 V 0.54 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 8.3 g designer with the best combination of fast switching, Q (nC) 2.3 gs ruggedized device design, low on-resistance and Q (nC) 3.8 gd cost-effectiveness. 2 Configuration Single The D PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHF510S-GE3 SiHF510STRL-GE3 SiHF510STRR-GE3 a a Lead (Pb)-free IRF510SPbF IRF510STRLPbF IRF510STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 5.6 C Continuous drain current V at 10 V I GS D T = 100 C 4.0 A C a Pulsed drain current I 20 DM Linear derating factor 0.29 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 75 mJ AS a Avalanche current I 5.6 A AR a Repetitive avalanche energy E 4.3 mJ AR Maximum power dissipation T = 25 C 43 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 4.8 mH, R = 25 , I = 5.6 A (see fig. 12) DD J g AS c. I 5.6 A, di/dt 75 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. E, 07-Sep-2020 Document Number: 91016 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF510S, SiHF510S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.4 A - - 0.54 DS(on) GS D b Forward transconductance g V = 50 V, I = 3.4 A 1.3 - - S fs DS D Dynamic Input capacitance C - 180 - iss V = 0 V, GS Output capacitance C -8V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and fig. 13 Gate-drain charge Q --3.8 gd Turn-on delay time t -6.9 - d(on) Rise time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 Turn-off delay time t -1g D 5- d(off) Fall time t -9.4- f Gate input resistance R f = 1 MHz, open drain 2.5 - 11.6 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 5.6 S showing the A G integral reverse a Pulsed diode forward current I -- 20 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 5.6 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = 5.6 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -0.44 0.88 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. E, 07-Sep-2020 Document Number: 91016 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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