PD - 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
V = 100V
DSS
Dynamic dv/dt Rating
175C Operating Temperature
R = 44m
DS(on)
Fast Switching
G
Fully Avalanche Rated
I = 33A
D
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 33
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 23 A
D C GS
I Pulsed Drain Current 110
DM
P @T = 25C Power Dissipation 130 W
D C
Linear Derating Factor 0.87 W/C
V Gate-to-Source Voltage 20 V
GS
I Avalanche Current 16 A
AR
E Repetitive Avalanche Energy 13 mJ
AR
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 1.15
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
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11/3/03IRF540NPbF
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA
(BR)DSS J
D
R Static Drain-to-Source On-Resistance 44 m V = 10V, I = 16A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 21 S V = 50V, I = 16A
fs DS D
25 V = 100V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
250 V = 80V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 71 I = 16A
g D
Q Gate-to-Source Charge 14 nC V = 80V
gs DS
Q Gate-to-Drain Mille) Charge 21 V = 10V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 11 V = 50V
d(on) DD
t Rise Time 35 I = 16A
r D
ns
t Turn-Off Delay Time 39 R = 5.1
d(off) G
t Fall Time 35 V = 10V, See Fig. 10
f GS
D
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
nH
G
from package
L Internal Source Inductance
7.5
S
and center of die contact S
C Input Capacitance 1960 V = 0V
iss GS
C Output Capacitance 250 V = 25V
oss DS
C Reverse Transfer Capacitance 40 pF = 1.0MHz, See Fig. 5
rss
E Single Pulse Avalanche Energy 700 185 mJ I = 16A, L = 1.5mH
AS AS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
33
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
110
(Body Diode) p-n junction diode. S
V Diode Forward Voltage 1.2 V T = 25C, I = 16A, V = 0V
SD J S GS
t Reverse Recovery Time 115 170 ns T = 25C, I = 16A
rr J F
Q Reverse Recovery Charge 505 760 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Notes:
Repetitive rating; pulse width limited by I 16A, di/dt 340A/s, V V ,
SD DD (BR)DSS
max. junction temperature. (See fig. 11) T 175C
J
Pulse width 400s; duty cycle 2%.
Starting T = 25C, L =1.5mH
J
This is a typical value at device destruction and represents
R = 25, I = 16A. (See Figure 12)
G AS
operation outside rated limits.
This is a calculated value limited to T = 175C .
J
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