PD-94247A
IRF5M5210
POWER MOSFET 100V, P-CHANNEL
HEXFET MOSFET TECHNOLOGY
THRU-HOLE (TO-254AA)
Product Summary
Part Number R I
DS(on) D
IRF5M5210 -34A
0.07
TO-254AA
Description
Fifth Generation HEXFET power MOSFETs from IR HiRel
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon unit area. This
Features
benefit, combined with the fast switching speed and
Low R
DS(on)
ruggedized device design that HEXFET power MOSFETs Avalanche Energy Ratings
Dynamic dv/dt Rating
are well known for, provides the designer with an extremely
Simple Drive Requirements
efficient device for use in a wide variety of applications.
Ease of Paralleling
These devices are well-suited for applications such as switching
Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio
Light Weight
amplifiers and high-energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
-34
I @ V = -10V, T = 25C Continuous Drain Current
D GS C
-21
A
I @ V = -10V, T = 100C Continuous Drain Current
D GS C
-136
I Pulsed Drain Current
DM
125 W
P @T = 25C Maximum Power Dissipation
D C
1.0 W/C
Linear Derating Factor
20 V
V Gate-to-Source Voltage
GS
520
E Single Pulse Avalanche Energy mJ
AS
A
I Avalanche Current -21
AR
12.5 mJ
E Repetitive Avalanche Energy
AR
-3.4 V/ns
dv/dt Peak Diode Recovery dv/dt
-55 to + 150
T Operating Junction and
J
T Storage Temperature Range C
STG
300 (0.063 in. /1.6 mm from case for 10s)
Lead Temperature
9.3 (Typical) g
Weight
For Footnotes refer to the page 2.
1 2016-06-23 IRF5M5210
Electrical Characteristics @ T = 25C (Unless Otherwise Specified)
j
Parameter Min. Typ. Max. Units Test Conditions
BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -250A
DSS
GS D
BV / T Breakdown Voltage Temp. Coefficient -0.12 V/C Reference to 25C, I = -1.0mA
DSS J D
Static Drain-to-Source On-State
R 0.07 V = -10V, I = -21A
DS(on) GS D
Resistance
V
GS(th) Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
DS GS D
Gfs Forward Transconductance 10 S V = -15V, I = -21A
DS D
I -25 V = -100V, V = 0V
DSS DS GS
Zero Gate Voltage Drain Current A
-250 V = -80V,V = 0V,T =125C
DS GS J
I Gate-to-Source Leakage Forward -100 V = -20V
GSS GS
nA
Gate-to-Source Leakage Reverse 100 V = 20V
GS
Q Total Gate Charge 180 I = -21A
G D
Q Gate-to-Source Charge 25 nC V = -80V
GS DS
Q Gate-to-Drain (Miller) Charge 100 V = -10V
GD GS
t Turn-On Delay Time 28 V = -50V
d(on) DD
tr Rise Time 150 I = -21A
D
ns
t Turn-Off Delay Time 100
R = 2.5
d(off) G
t Fall Time 120 V = -10V
f GS
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
Ls +L Total Inductance 6.8 nH
D
from package) with Source wire internally
bonded from Source pin to Drain pad
C Input Capacitance 2730 V = 0V
iss GS
pF
C Output Capacitance 824 V = -25V
oss DS
C Reverse Transfer Capacitance 465 = 1.0MHz
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I Continuous Source Current (Body Diode) -34
S
A
I Pulsed Source Current (Body Diode) -136
SM
V Diode Forward Voltage -1.6 V T = 25C,I = -21A, V = 0V
SD J S GS
t Reverse Recovery Time 260 ns T = 25C, I = -21A, V - 30V
rr J F DD
Q Reverse Recovery Charge 1.8 C di/dt = 100A/s
rr
Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
t Forward Turn-On Time
on S D
Thermal Resistance
Parameter Min. Typ. Max. Units
R Junction-to-Case 1.0
JC
Case -to-Sink 0.21
R
C/W
CS
Junction-to-Ambient (Typical socket mount) 48
R
JA
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V = -25V, starting T = 25C, L = 2.4mH, Peak I = -21A, V = -10V,R = 25
DD J L GS G
I -21A, di/dt -400A/s, V -100V, T 150C
SD DD J
Pulse width 300 s; Duty Cycle 2%.
2 2016-06-23