IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 250 Definition DS Surface Mount R ( )V = 10 V 2.0 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 8.2 g Dynamic dV/dt Rating Q (nC) 1.8 gs Repetitive Avalanche Rated Q (nC) 4.5 Fast Switching gd Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC D 2 D PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It D G provides the highest power capability and the lowest S S possible on-resistance in any existing surface mount 2 package. The D PAK (TO-263) is suitable for high current N-Channel MOSFET applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHF614S-GE3 - SiHF614STRR-GE3 a a IRF614SPbF IRF614STRLPbF IRF614STRRPbF Lead (Pb)-free a a SiHF614S-E3 SiHF614STL-E3 SiHF614STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 2.7 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.7 A C a Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.29 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 61 mJ AS a Avalanche Current I 2.7 A AR a Repetitive Avalanche Energy E 3.6 mJ AR Maximum Power Dissipation T = 25 C 36 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 13 mH, R = 25 , I = 2.7 A (see fig. 12). DD J g AS c. I 2.7 A, dI/dt 65 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91026 www.vishay.com S11-1063-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF614S, SiHF614S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 250 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.39 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.6 A -- 2.0 DS(on) GS D b Forward Transconductance g V = 50 V, I = 1.6 A 0.90 - - S fs DS D Dynamic Input Capacitance C - 140 - iss V = 0 V, GS Output Capacitance C -4V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -9.6- rss Total Gate Charge Q -- 8.2 g I = 2.7 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.5 gd Turn-On Delay Time t -7.0 - d(on) Rise Time t -7.6 - r V = 125 V, I = 2.7 A, DD D ns b Turn-Off Delay Time t -1R = 24 , R = 45 , see fig. 106- d(off) g D Fall Time t -7.0- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 2.7 S showing the G A integral reverse a S Pulsed Diode Forward Current I -- 8.0 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 2.7 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 190 390 ns rr b T = 25 C, I = 2.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.64 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91026 2 S11-1063-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000