X-On Electronics has gained recognition as a prominent supplier of IRF624SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF624SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF624SPBF Vishay

IRF624SPBF electronic component of Vishay
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Part No.IRF624SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 250 V 4.4A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: IRF624SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.156 ea
Line Total: USD 2.16 
Availability - 780
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
780
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.156
10 : USD 1.21
100 : USD 1.122
500 : USD 0.9724
1000 : USD 0.9724

   
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We are delighted to provide the IRF624SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF624SPBF and other electronic components in the MOSFETs category and beyond.

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IRF624S, SiHF624S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G Fast switching Available Ease of paralleling Simple drive requirements D G Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 250 DS DESCRIPTION R ( )V = 10 V 1.1 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 14 g designer with the best combination of fast switching, Q (nC) 2.7 gs ruggedized device design, low on-resistance and Q (nC) 7.8 gd cost-effectiveness. Configuration Single 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and halogen-free SiHF624S-GE3 Lead (Pb)-free IRF624SPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 4.4 C Continuous drain current V at 10 V I GS D T = 100 C 2.8 A C a Pulsed drain current I 14 DM Linear derating factor 0.40 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 100 mJ AS a Repetitive avalanche current I 4.4 A AR a Repetitive avalanche energy E 5.0 mJ AR Maximum power dissipation T = 25 C 50 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.1 A c Peak diode recovery dv/dt dv/dt 4.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 8.3 mH, R = 25 , I = 4.4 A (see fig. 12) DD J g AS c. I 4.4 A, di/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. D, 07-Sep-2020 Document Number: 91030 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF624S, SiHF624S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 40 thJA a (PCB mount) C/W Maximum junction-to-ambient R -- 62 thJA Maximum junction-to-case (drain) R -- 2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 250 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.36 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 200V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 2.6 A -- 1.1 DS(on) GS D b Forward transconductance g V = 50 V, I = 2.6 A 1.5 - - S fs DS D Dynamic Input capacitance C - 260 - iss V = 0 V, GS Output capacitance C -7V = 25 V, 7- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 14 g I = 4.4 A, V = 200 V D DS Gate-source charge Q --V = 10 V 2.7 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.8 gd Turn-on delay time t -7.0 - d(on) V = 125 V, I = 4.4 A DD D Rise time t -13 - r R = 18 , R = 28 ns g D Turn-off delay time t -2 b 0- d(off) see fig. 10 Fall time t -12- f Gate input resistance R f = 1 MHz, open drain 0.7 - 5.4 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 4.4 S showing the A G integral reverse a S Pulsed diode forward current I p - n junction diode -- 14 SM b Body diode voltage V T = 25 C, I = 4.4 A, V = 0 V -- 1.8 V SD J S GS Body diode reverse recovery time t - 200 400 ns rr T = 25 C, I = 4.4 A, J F b di/dt = 100 A/s Body diode reverse recovery charge Q - 0.93 1.9 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. D, 07-Sep-2020 Document Number: 91030 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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